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Facility: Clean Rooms - Nanofabrication

©2010 François-Xavier Beckers (CC-BY)

The Southampton Nanofabrication Centre is a state-of-the-art facility for microfabrication and high-spec nanofabrication, as well as a wide range of characterisation capabilities housed in the new Mountbatten Complex at the University of Southampton. One of the premiere cleanrooms in Europe, the Centre has a uniquely broad range of technologies, combining traditional and novel top down fabrication with state-of-the-art bottom up fabrication. This allows us to develop and produce a wide range of devices in diverse fields such as electronics, nanotechnology and bionanotechnology and incorporate them into an equally comprehensive array of nano and microsystems for analysis and use. The characterisation capability is similarly extensive catalogue of microscopes and test gear, from nanometre resolution scanning microscopes to electrical, magnetic and RF analysis. A detailed equiment list can be found at http://www.southampton-nanofab.com/machineDatabase/

Contact: Dr Ian Anteney +442380599045 ecspartners@ecs.soton.ac.uk

Equipment

Axio Observer Z1 Inverted Microscope

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

OPTIwet mask cleaner & lift off tool (SSE OPTIwet ST 30 mask cleaner)

Cleaner/lift-off/stripper module/developer module. 4,6,8 inch wafers, 5.6.7 inch plates.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Tempress Furnace Stack (Tempress TTS8603BM LPCVD Furnace Stack)

200mm wafers, automated loading, LPCVD silicon nitride 600-850C, anneal 600-1150C, alloy 200-900C, temperature accuracy +/-, 25 wafer boats.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

ThermoVG Thetaprobe XPS Measurement System (Theta probe PARXPS system)

Parallel angle-resolved XPS (PARXPS) analysis without sample tilting, ability to collect angle-resolved XPS spectra over a 60 degree angular range, in parallel, without tilting the sample and allows the instrument to characterise ultra-thin films non-destructively, allows composition depth profiling using an integrated etching module, X-ray monochrmator with user-selectable spot size in the range 15um to 400um,. Ability to handle large or multiple samples, CCD sample alignment microscope perpendicular to the sample surface.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Brewer Science Cee® 200 Precision Spin Coater - Main Cleanroom (LI12 Brewer Science Cee200 Precision Spin Coater)

Coater for metal coating of insulating samples prior to SEM imaging. The Brewer Science® Cee® 200X features convenient compact footprint, chemical compatibility, and durability, this easy-to-use benchtop system will provide years of high-performance spin coating, making the Cee® 200X purchase a smart and cost-effective decision for applying coatings to substrates up to 200 mm round or 7" square. 250X.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Focussed Ion Beam (ME02 Zeiss NVision40)

The focussed ion beam (FIB) is a multi nanofabrication tool system capable of performing sophisticated nanomachining, in-situ metal or insulator deposition, lithography and metrology analysis. This versatile system is based on the dual ion and electron beams column concept, which allows it to perform ionic nanofabrication function while imaging using the scanning electron microscope. The liquid metal ion source (LMIS) for the system is gallium and it is integrated to an ionisation tungsten tip to produce a fine and high resolution ion beam. The additional features in the FIB are ion and electron beam induced deposition using gaseous metal-insulator sources.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Rapid Thermal Annealer (RTA) furnaces (x2) (Jipolec Jetfirst 200 (JF200400) Rapid Thermal Annealer)

150mm wafers, temepratures from 400-1000/1200C (pyrometer), 400-1000C (thermocouple), times from 5s to 10mins, temperature accuracy +5c, temperature reproducibility

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Nikon L200D microscope (Nikon L200D microscope)

Upright 8" yellow room microscope, 5M camera, 5x to 150x objectives, Nomarski

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Spectroscopic Ellipsometer

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Lambda Photometrics MSA400 Microsystem analyser (MSA-400 Micro System Analyser)

3D MEMS dynamics and topography tester. Scanning laser vibrometry for out of plane vibrations up to 20MHz, stroboscopic video microscopy for in-plane motion & vibrations, white light interferometry for surface topography

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Spectrum Analyser (DM Optical Spectrum Analyser (AQ6370))

The AQ6370 is Yokogawa's high speed and high performance Optical Spectrum Analyzer for characterization of optical communications system and optical components.                                                                                 - High wavelength resolution: 0.02 nm
- Wide close-in dynamic range
- Single Mode and Multimode fiber test capability, via the same optical input:up to GI 62.5/125nm.
- Pulsed light measurement capability

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Edwards Resistance Evaporator (BOC Edwards Auto 306 Resitance Evaporation System)

Resistance evaporation source for filament or boat evaporation. A built-in shield prevents unwanted coating of the vacuum chamber and adjacent deposition accessories. Four position turret evaporation source capable of sequentially depositing up to 4 different materials without breaking vacuum. Sources are selected and rotated into the evaporation position using a simple handwheel control. The sources can be configured to evaporate from the center or the side of the vacuum chamber for optimum film thickness uniformity onto a choice of static or rotating substrate fixtures.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Nikon LV100D Bioelectronics microscope (Nikon LV100D)

Upright 6" bioMEMS microscope, 5m camera, display & software, 5x to 150x objectives, Nomarski

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Ellipsometer (Woollam Md2000D Ellipsometer)

Spectral range 190nm-1999nm, 200mm computer controlled sample positioning, auto angle of incidence

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Long Scan Profiler (KLA Tencor P-11 Long Scan Surface Profiler)

Measures roughness, waviness, step height and wafer stress, 2D and 3D fully autiomated data scans, sequencing capable, up to 8" substrates, vertical features from 100A-300um with a vertical resolution down to 0.5A.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Agilent Spectrum Analyser (Agilent E4411B ESA-L Spectrum Analyser)

9kHz - 1.5GHz

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Imoxs x-ray source for SEM (IFG iMOXS X-ray source attachement to EVO SEM)

X-ray fluorescence (XRF) analysis of glasses & high sensitivity trace analysis, spatial resolution 50um, sensitivity element dependant, down to 50ppm

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Etching System

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

12 Tesla liquid helium cryostat (13 Tesla Cryogen Free Magnet System (Q6003A))

12 Tesla cryogen-free magnet system with 25mm integrated VTI pulse tube cooler, 1.6K - 325k sample space of 25mm diameter, cooldown <24 hours, 300 degree sample rotation

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Four Point Probe

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Tempress  Flexible Furnace Stack (Tempress TS6304BM Flexible furnace stack)

150mm wafers, automated loading, three general furnaces 600-1150C, temperature accuracy +/- 25 wafer boats.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Plasma System 300 (x2) (TePla plasma asher system 300)

Two microwave plasma batch ashers: 1000w, 0.4-1.5 mbarm ebdpoint detector for resist strip.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Fine Wire Bonder (Delvotec SiTest Wire Wedge Bonder Model 5430)

Ultrasonic wedge bonder, AI and Au wires (25um), minimum bond pads 50x50um2, bare silicon bonding, programmable individual bonding parameters.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Scanning Electron Microscope (SEM) (Zeiss EVO LS25 Life Science SEM)

The Zeiss EVO SEM is able to image a wide variety of non-conducting materials and is specially designed to allow imaging in liquids. This allows biological samples to be imaged without any problems arising from sample dehydration. The Zeiss EVO SEM has a resolution of 3nm at 30kV, 10nm at 3kV and 20nm at 1kV. Integrated X-ray functionality allows for energy-dissipative x-ray spectroscopy (EDX/EDS) and x-ray fluorescence spectroscopy (XRF).

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Orion Performance Upgrade Package

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Cryostat System with Spectrosil Windows

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

UV visible Microspectrometer System (QDI 302 UV) (qdi 302 uv-visible-nir microscope spectrophotometer)

The QDI 302 Microscope Spectrophotometer is designed to add spectroscopy and imaging to your optical microscope. It can also be used to upgrade a legacy microspectrometer or to add spectroscopic and film thickness capabilities to a probe station. The QDI 302 attaches to the microscope, microspectrometer or probe station and enables you to collect transmission, reflectance, polarization or even fluorescence spectra of microscopic samples. Depending upon the microscope optics and sources, the spectral range is from the deep UV to the near infrared region. With the QDI 302, high quality spectra of even sub-micron samples can be acquired non-destructively and with ease.

 

 

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Zeiss Analytical Scanning Electronic Microscope (SEM) (Carl Zeiss Evo 50 HV SEM)

 The EVO®50 series provides quality results from a versatile analytical microscope with a very large specimen chamber. Whether the specimen requires imaging in high vacuum, XVP® or EP, the EVO®50 series is able to image to perfection.

 

Contact: Dr Ian Anteney +442380599615 I.M.Anteney@soton.ac.uk

Oxide and insulator inductively coupled plasma etcher (ICP380+ Plasmalab System 100 DP06 RIE80+)

The etching plasma is created by an RIE RF source and RF induction magnetic coil to produce high plasma densities. The results are high etch rate, high aspect ratio, and anisotropic etching of material of the samples. The system can also operate in ICP or RIE mode separately. This system is configured for fluorine-based chemistry etching. Ideal for deep oxide etching, silicon nitride, polymer, poly-silicon, amorphous silicon and crystalline silicon.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Evaporator gun (PT10 Leybold BAK600)

BAK600 e-gun/thermal evaporator is configured for non-reactive deposition of metal contact stacks , metal masking layers, some dielectrics, ITO.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Deposition Box / Gas Cabinets

Contact: Dr Ian Anteney +442380599615 I.M.Anteney@soton.ac.uk

EVG Top and Bottom Side Mask Aligner - manual (Mask aligner LI04 EVG 620TB (BIO))

The EVG620 is a dual-use tool designed for optical double-side lithography and precision alignment up to 150 mm wafer sizes. The fully-automated EVG620 utilizes a cassette-to-cassette handling system to efficiently process wafers from 50 mm to 150 mm in diameter, regardless of their shape or thickness. The system safely handles thick, bowed or small diameter wafers. The EVG620 superior alignment stage design achieves highly accurate alignment and exposure results while maintaining high throughput.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Liquid source PECVD system for the deposition of silicon dioxide, silicon nitride and TEOS (OIPT System 100 liquid source PECVD system)

The OIPT System 100 liquid source PECVD system allows the deposition of silicon dioxide and silicon nitride from the gas phase and silicon dioxide from a liquid TEOS source. It also has a spare liquid source unit for the deposition of doped glasses.    A basic process for deposition of silicon dioxide uses a mixture of 100% silane as the silicon source and nitrous oxide as the oxygen source. Growth is typically achieved at a temperature of 300 - 400C, with a deposition rate > 50 nm/min. The refractive index is typically 1.46 and adjustable between 1.45 and 1.50. The stress is typically <-300MPa compressive.    Silicon dioxide can also be produced using a TEOS liquid source at a temperature of 350-400C and a deposition rate of >40nm/min. A typical refractive index is 1.46 and step coverage is typically >75%.    A basic process for silicon nitride deposition uses 100% silane as the silicon source and ammonia as the nitrogen source. Growth is typically achieved at 300 - 400C. Growth can be performed either a HF only process or a pulsed HF/LF process. The low frequency pulses are added to reduce stress in the silicon nitride film and improve film quality. The growth rate is typically >10nm/min, the refractive index is 1.98 and stress is <50Mpa for the dual LF/HF process.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Helios reactive ion assisted sputtering system (PT14 Leybold Helios sputtering system type xl 6")

The HELIOS sputtering tool is a flexible platform for fast, precise and fully automated thin film coatings. It specializes in high quality optical coatings featuring very low absorption and scattering. Optical performance is ensured by the extremely dense, smooth, stoichiometric, and amorphous layers. Precision in layer growth control is facilitated by an optical monitoring system for in-situ on-substrate measurements.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Metal inductively coupled plasma etcher (ICP380+ Plasmalab Sys100 DP02 ICP380 Metal)

The etching plasma is created by an RIE RF source and RF induction magnetic coil to produce high plasma densities. The results are high etch rate, high aspect ratio, and anisotropic etching of material of the samples. The system can also operate in ICP or RIE mode separately. The system is configured to etch metal, III-N, III-V and silicon.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Elliot Microspectrometer System (Microspectrometry System)

Contact: Dr Javanta Sahu +442380233162 jks@orc.soton.ac.uk

Rapid Prototyping System (Rapid Prototyping Objet Connex 350)

Rapid prototyping machine, build resolution x-axis 600dpi/42um, y-axis 600dpi/42um, z-axis 1600dpi/16um, build size XxYxZ) 342 x 342 x 200mm, input formats STL, IPT, IAM, SLC and objDF files. Two resin setup VeroWhite (hard) and VeroBlack (soft), capable of producing parts of any hardness level by mixing both resins.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Integrated multiprobe SPM and Raman spectrometer: TERS, optical transmission & reflection measurement (Multiview 4000)

The MultiView 4000 is a multi scanning probe system with an open platform for integration with a Raman spectrometer. The system is configured for dual probes set-up that allows multiple probe SNOM measurement and other SPM imaging. The system is also configured for optical waveguide device characterisation.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Deep silica/silicon etcher - Reactive Ion Beam Etcher (Oxford Instruments DP05 Ionfab300Plus)

Ionfab300Plus is a modular System designed for ion beam etching. It is used in a wide variety of processes, particularly in the Semiconductor and Optical Coating Industries.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Field Emmission Scanning Electron Microscope (FEG-SEM). (EL02 FEG-SEM - Jeol JSM 7500F FESEM)

High resolution FEG-SEM for sub 100nm imaging. Magnification x100 to x1000000

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Atomic layer deposition system (OIPT System 100 liquid source PECVD system PT05 OIPT FlexAl ALD)

The FlexAl system allows the deposition of ultra-thin layers (typically a few nm) of a variety of metal oxides and nitrides from liquid precursors. The deposition process works by providing a short pulse of precursor, followed by purge and exhaust steps. This cycle is then repeated to build up a layer.     Typical growth rates are around 1A/cycle. The system is currently configured for the deposition of ZnO and Al2O3.     ZnO is deposited using a DEZ precursor. The deposition rate is typically 1A/cycle at 150C. The refractive index of ALD ZnO varies from 1.75 at low temperature to 1.83 at high temperaure, compared with 1.985 for bulk ZnO. Annealing at 425C (not optimised) can help improve electrical properties.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Semi-auto wafer & integrated optical components test & characterization system. (Optical Component Characterization System)

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Tunable Mid Ir External Cavity (CW Laser Head)

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Cascade Summit 12000B-AP probe station (Summit 12000B-Ap Probe Station Platform)

Semi-automatic 200mm probe station with micro-chamber, temperature control -65-200C. 4x67GHz infinity probes, eVue digital imaging system

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Profilometer (Ambios Xp100 Stylus Surface Profiler)

Vertical range to 400um, zoom optics 88-247x, 5um stylus, 10mm max scan length, manual X-Y stage.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

EVG150 Automated Resist Processing System

Designed to provide the widest range of process variations, the EVG100 series' modularity accepts spin and spray coating, developing, bake and chill modules to suit your individual production requirements. These systems accommodate the processing of an extensive range of materials such as positive and negative resists, polyimides, double-sided coating of thin resist layers, high viscosity resists, and edge protection coatings.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Flourescence system (Xradia nanoXFi flourescence imaging spectrometer attachment to EVO SEM)

Sub 100nm spatial resolution imagaing of distribution elements in a sample. Spatial location of lements in an alloy, imaging of contacts under metal, semiconductor metal failure analysis, analysis of layered structures.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

The Thick Films and MEMs room shared between Nano and ESD (Thick Films - ME11 Malvern Zetasizer Nano ZS)

Dynamic light scattering system for the determination of the size and zeta potential of suspended nanoparticles in solution.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Benchtop Furnace (Hitech benchtop furnace)

150mm wafers, manual loading, general furnace, temperature accuracy +/- 1C, 25 wafer boats.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

EVG Top Side Mask Aligner - robot and manual (EVG 6200 Infinity)

The EVG 6200 Infinity provides high precision alignment on top and bottom surfaces of samples. Fully automated with robotic delivery from wafer carrier to exposure, this machine can handle wafer sizes up to 200mm. Exposure can be performed in hard, soft and proximity modes, with the option of manual control.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Deep Reactive Ion Etcher (DRIE Si etch) (STS LPX Pegasus de-coupled ASE ICP)

The STS Pegasus tool is used for dry etching of mainly Silicon using the Bosch process.  High aspect ratio, deep trenches from a few microns to full wafer thickness can be etched at varying rates.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Oxide and insulator reactive ion etcher (NON METAL CONTAMINATED) (Reactive Ion Etcher DP01 RIE80+)

The etch mechanism of RIE is achieved by using the reactive gas plasma generated by strong RF source (13.56 MHz) to chemically ion etch the material of the samples. Depending on the process recipe, the material’s etched profile can achieve high anisotropy. The DP01 RIE80+ system is configured for etching of polysilicon, amorphous silicon, silica, silicon nitride and polymer. 13.56 MHz driven parallel plate reactor   Substrate electrode: 170 or 240 mm   Shower head gas inlet optimised for RIE   High conductance vacuum layout   Gases: CHF3, Ar, O2, SF6, CF4, N2

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Particle Measurement Tool (KLA Tencor surfscan 4500)

Particle measurement tool, 150mm substrates, sub micron particles down to 0.2um, measurement time 30 sec on 6" wafers, particles sensitivity 0.2um diameter latex spheres, haze sensitivity 0.4ppm, spatial resolution 50um spacing minimum, measurement range 0.004um and 102um in twelve ranges and 256 gradations.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Tempress Clean Furnace Stack (Tempress TS6304BM Clean Furnace Stack)

150mm wafers, automated loading, dru oxidation 600-1150C, wet oxidation 600-1150C, anneal 600-1150C, temperature accuracy +/- 1C, 25 wafer boats.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

DC Device Multi Probe Station

Cascade Microtech prober, 4 x DCM 210 positioners, Agilent 4155C Semiconductor Parameter Analyser, Agilent 4279A 1MHz CV meter, Agilent E4443A sHz-6.7GHz spectrum analyser, Agilent MXG N5181A analog signal generator 250 KHz-1 GHz

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

EVG620 Double Side Mask Aligner

The EVG620 is a dual-use tool designed for optical double-side lithography and precision alignment up to 150 mm wafer sizes. Volume production types and manual R&D systems are available. An ultra-soft wedge compensation together with a computer controlled contact force between the mask and wafer ensures that both yield and mask lifetime are dramatically increased while production costs are lowered. The fully-automated EVG620 utilizes a cassette-to-cassette handling system to efficiently process wafers from 50 mm to 150 mm in diameter, regardless of their shape or thickness. The system safely handles thick, bowed or small diameter wafers.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Scriber (MDI MP 500A-CE Scribe and dice)

Scribing of Si, glass & brittle materials. Scribing of glass in all directions with auto alignment function, handles up 300mm substrates with a thickness up to 2mm.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Tunable Laser System (Coherent CW Tunable Laser System)

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Fibre Laser (Vanadium Fibre Laser Marker)

Wafer scribing tool, Vanadium Fibre Laser (1064nm wavelength, 0.25mJ pulse energy, 25um spot size), up to 5000 mm/s scanning speed, programmable z-axis, 245 lens upgrade allowing 220mm diameter field size, vision system for lase focusiing

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Cascade M150 prober (Cascade Microtech M150 Mulitpurpose Probing System)

150mm manual probe station, 6 probes, Leica S6 stereo zoom microscope, 0.6-4xzoom, 30 x eyepieces

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

M500-100CT Universal Materials Testing Machine (Materials Testing Machine)

The CT 500 range of twin column, computer controlled universal materials testing machine using Testometric\'s feature-rich winTest™ software running under the Windows™ operating system. Test setups are fully configurable and simple or more complex multi-stage test routines are controlled using the standard PC serial interface.

Contact: Dr Ian Anteney +442380599615 I.M.Anteney@soton.ac.uk

Laser (Agilent Tunable Laser Source (81600b-200))

Enable precise characterization of advanced optical components. Signal output with low spontaneous emission (SSE) permits measurement of filters with highest dynamic range.                                                                             •Highest measurement range through low spontaneous source emission (low SSE), Signal to SSE Ratio >70 dB/nm

 •Variable sweep speed up to 80nm/s

 •Wide tuning range units cover all transmission bands: 1260nm-1640nm

 •Built-in high performance 60dB attenuator

 •Built-in wavemeter with excellent wavelength-accuracy +/-3.6pm

 

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Laser Spectronomy System (Femtosecond Laser System)

Femtosecond optical charecterisation system, coherent laser, CCD camera & optics.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Cryogenic Probe Station

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Gis System For Orion Microscope (Gis System for Helion Orion Zeiss Microscope)

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Spectrum Analyser (DM Optical Spectrum Analyser (AQ6315A))

•Optical fiber loss wavelength characteristics.

 •Optical filter loss evaluation.

 •Fiber grating characteristics evaluation.

 •Color analysis.

 •Parameter evaluation for LED, FP-LD and FB-LD.

 •WDM device characteristics.

 •evaluation.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Elemental Analysis: O-orion-rbs

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

he ion microscope: Orion-bu

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Oxide and insulator reactive ion etcher (METAL CONTAMINATED) (Reactive Ion Beam 80+)

The etch mechanism of RIE is achieved by using the reactive gas plasma generated by strong RF source (13.56 MHz) to chemically ion etch the material of the samples. Depending on the process recipe, the material’s etched profile can achieve high anisotropy. The DP06 RIE80+ system is configured for multimaterial etching like silica, silicon nitride, polymer, III-V based, semiconductor-metal, polysilicon and amorphous silicon.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Laser Lithographer (Nanoscribe Laser Lithograophy System)

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Photon Counting Flourscent Indicator (Photon Counter)

Contact: Dr Javanta Sahu +442380233162 jks@orc.soton.ac.uk

Fibre Laser (Fibre Tapering & Bundling System)

Offers precision fusion splicing and fused fiber components critical to high-power fiber laser performance. This includes creating combiners and tapers, large mode area (LMA) fiber splicing, photonic crystal fiber (PCF) splicing, and large diameter fiber splicing with low loss.

 

Contact: Dr Ian Anteney +442380599615 I.M.Anteney@soton.ac.uk

Top and Bottom side Mask Aligner - manual, main yellow room (Mask aligner LI02 EVG 620TB)

The EVG620 is a dual-use tool designed for optical double-side lithography and precision alignment up to 150 mm wafer sizes. The fully-automated EVG620 utilizes a cassette-to-cassette handling system to efficiently process wafers from 50 mm to 150 mm in diameter, regardless of their shape or thickness. The system safely handles thick, bowed or small diameter wafers. The EVG620 superior alignment stage design achieves highly accurate alignment and exposure results while maintaining high throughput.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

The Caliber Scanning Probe Microscope - large samples. (Veeco Caliber SPM system)

The Caliber is a versatile and high performance SPM system designed for multifunctional and routine microscopy of surface topology, polymer, biomaterials and semiconductor materials. The compact design and user friendly interface make it a suitable educational tool as well as for research activity.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

PECVD system for deposition of amorphous and polycrystalline Si, Ge and SiGe (PT04 OIPT Poly System 100)

Plasma Enhanced Chemical Vapour Deposition (PECVD) system for the growth of amorphous and polycrystalline Si, SiGe and Ge layers.     The layers can be doped during growth either n-type (using PH3) or p-type (using B2H6), thereby allowing p-n junctions to be formed.     Amorphous silicon uses  SiH4 for the source of silicon and CF4 & O2 for cleaning. The growth temperature is typically 250C, giving a growth rate of around 25 nm/min. Stress in the deposited layer is typically <200Mpa.     Polycrystalline silicon uses SiH4 for the source of silicon and CF4 & O2 for cleaning. The growth temperature is typically >=610C. The growth rate at 610C is ~2 nm/min and at 650C ~ 20nm/min.     Microcrystalline silicon uses  SiH4 for the source of silicon and CF4 & O2 for cleaning. The growth temperature is typically in the range 585 - 610C, giving growth rates in the range 1 - 2 nm/min.     Amorphous and polycrystalline germanium use GeH4 as a source of  Ge and CF4 & O2 for cleaning. Slightly lower temperatures can be used for deposition for Ge than for Si. The Ge can be doped during growth either n-type (using PH3) or p-type (using B2H6).    SiGe layers can be grown by mixing SiH4 and GeH4. Heterojunctions can be created in the SiGe layers by appropriate control of the SiH4 and GeH4 flows.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Veeco Multimode SPM - High resolution: Contact, Tapping, MFM, STM, LIQUID, EFM, SCM, CAFM (Multimode SPM)

The MultiMode V is a compact and very high resolution scanning probe microscopy system ideal for micro to atomic scale imaging activity. It has a flexible platform that enables microscopy of nanostructures in semiconductor, biological and polymer materials. It can produce very stable and low noise image of 0.3 Ã… in vertical dimension and can operate in fluid environment.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Agilent Network Analyser (Agilent 8361A microwave vector network analyser)

10MHz-67GHz. For use with Cascade probe station.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Evaporator Gun (PT07 Leybold LAB700)

 LAB700 e-gun evaporator incorporates 2e-guns each with a 5xcrucible plate. is configured for reactive ion assisted deposition of dielectrics, high precision lift off, variable angle deposition, cryogenic deposition

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Benchtop Furnace (Three Zone, Bench Top Furnace System inc)

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Epitaxy system for the growth of single-crystal Si, Ge, SiGe and SiGeC. (PT02 ASM Epsilon 2000)

The ASM Epsilon 2000 epitaxial reactor is a stand-alone, single-wafer system. ASM designed  the system for repeatable deposition of uniform layers of epitaxial silicon, silicon-germanium and silicon-germanium-carbon. The system is capable of both differential and selective silicon and silicon germanium epitaxy. In differential epitaxy, single-crystal material is grown wherever the silicon wafer is exposed and polycrystalline material elsewhere. In selective epitaxy, single-crystal material is grown wherever the silicon wafer is exposed and nothing is deposited elsewhere. Dichlorosilane (SiH2Cl2) gas is used as a source of Si, germane (GeH4) as a source of Ge and methylsilane(SiCH6) as a source of carbon. Carbon suppresses boron diffusion in the SiGe during high temperature annealing. The layers can be doped n-type using phosphine (PH3) and p-type using diborane (B2H6).

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Nikon LV150A microscope (x2) (Nikon LV150A)

Upright 6" yellow room microscope, 5m camera, 5x to 100x objectives

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

EVG Top Side Mask Aligner - manual (Mask aligner LI07 EVG 620T)

The EVG 620 provides high precision manual alignment on wafers. This is the main maks aligner of the cleanroom and can handle wafer sizes up to 150mm.  Exposure can be performed in hard, soft and proximity modes.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk

Helium Ion Microscope (ME01 Zeiss Orion Zeiss He-ion microscope)

The Zeiss Orion helium ion microscope has similar functionality to an electron microscope, but uses a focussed beam of helium ions in place of the electrons. The larger mass and therefore smaller de Broglie wavelength of helium ions compared to electrons means that the scanning helium ions microscope suffers less from diffraction effects than a scanning electron microscope (SEM). Since helium ions can be focused into a smaller probe size and provide a much smaller sample interaction compared to electrons, the Orion generates higher resolution images with better material contrast and 5 times improved depth of focus. The high resolution arises from the use of a finely sharpened needle and a process that strips individual atoms away from the source until an atomic pyramid is created with just three atoms at the very end of the source tip. The Orion achieves a resolution of less than 0.9nm at an energy of 25-30kV and can deliver beam currents between 1fA and 25pA. Analysis of material composition can also be performed using Rutherford backscattering.

Contact: Dr Iain Anteney +442380599615 ia@ecs.soton.ac.uk