http://id.southampton.ac.uk/equipment/E10239

→ rdfs:label → "Opt System 100 Oxide Etcher"^^xsd:string

→ dcterms:description → "The etch mechanism of RIE is achieved by using the reactive gas plasma generated by strong RF source (13.56 MHz) to chemically ion etch the material of the samples. Depending on the process recipe, the material⿿s etched profile can achieve high anisotropy. The DP01 RIE80+ system is configured for etching of polysilicon, amorphous silicon, silica, silicon nitride and polymer. 13.56 MHz driven parallel plate reactor Substrate electrode: 170 or 240 mm Shower head gas inlet optimised for RIE High conductance vacuum layout Gases: CHF3, Ar, O2, SF6, CF4, N2"^^xsd:string

→ skos:notation → "E10239"^^http://id.southampton.ac.uk/ns/equipment-code-scheme

→ http://data.ordnancesurvey.co.uk/ontology/spatialrelations/within → http://id.southampton.ac.uk/building/53

→ rdfs:comment → "The etch mechanism of RIE is achieved by using the reactive gas plasma generated by strong RF source (13.56 MHz) to chemically ion etch the material of the samples. Depending on the process recipe, the material⿿s etched profile can achieve high anisotropy. The DP01 RIE80+ system is configured for etching of polysilicon, amorphous silicon, silica, silicon nitride and polymer. 13.56 MHz driven parallel plate reactor Substrate electrode: 170 or 240 mm Shower head gas inlet optimised for RIE High conductance vacuum layout Gases: CHF3, Ar, O2, SF6, CF4, N2"^^xsd:string

→ foaf:depiction → http://data.southampton.ac.uk/image-archive/equipment/raw/E10239-200641-P1000882.jpg

→ oo:contact → http://id.southampton.ac.uk/equipment/E10239#secondary_contact

→ foaf:page → http://www.southampton-nanofab.com/fabrication/dryEtch.php

→ dc:description → "The etch mechanism of RIE is achieved by using the reactive gas plasma generated by strong RF source (13.56 MHz) to chemically ion etch the material of the samples. Depending on the process recipe, the material⿿s etched profile can achieve high anisotropy. The DP01 RIE80+ system is configured for etching of polysilicon, amorphous silicon, silica, silicon nitride and polymer. 13.56 MHz driven parallel plate reactor Substrate electrode: 170 or 240 mm Shower head gas inlet optimised for RIE High conductance vacuum layout Gases: CHF3, Ar, O2, SF6, CF4, N2"^^xsd:string

→ oo:formalOrganization → http://id.southampton.ac.uk/

→ oo:organizationPart → http://id.southampton.ac.uk/org/FP, http://id.southampton.ac.uk/org/F7

→ oo:primaryContact → http://id.southampton.ac.uk/equipment/E10239#primary_contact