→ dcterms:description → "The etching plasma is created by an RIE RF source and RF induction magnetic coil to produce high plasma densities. The results are high etch rate, high aspect ratio, and anisotropic etching of material of the samples. The system can also operate in ICP or RIE mode separately. This system is configured for fluorine-based chemistry etching. Ideal for deep oxide etching, silicon nitride, polymer, poly-silicon, amorphous silicon and crystalline silicon."
→ skos:notation → "E10241"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ dc:description → "The etching plasma is created by an RIE RF source and RF induction magnetic coil to produce high plasma densities. The results are high etch rate, high aspect ratio, and anisotropic etching of material of the samples. The system can also operate in ICP or RIE mode separately. This system is configured for fluorine-based chemistry etching. Ideal for deep oxide etching, silicon nitride, polymer, poly-silicon, amorphous silicon and crystalline silicon."
→ rdfs:comment → "The etching plasma is created by an RIE RF source and RF induction magnetic coil to produce high plasma densities. The results are high etch rate, high aspect ratio, and anisotropic etching of material of the samples. The system can also operate in ICP or RIE mode separately. This system is configured for fluorine-based chemistry etching. Ideal for deep oxide etching, silicon nitride, polymer, poly-silicon, amorphous silicon and crystalline silicon."
→ rdfs:label → "Physical Sciences and Engineering"
→ rdfs:label → "School of Electronics & Computer Science"