@prefix rdf: <http://www.w3.org/1999/02/22-rdf-syntax-ns#> .
@prefix oo: <http://purl.org/openorg/> .
@prefix rdfs: <http://www.w3.org/2000/01/rdf-schema#> .
@prefix ns0: <http://data.ordnancesurvey.co.uk/ontology/spatialrelations/> .
@prefix dcterms: <http://purl.org/dc/terms/> .
@prefix skos: <http://www.w3.org/2004/02/skos/core#> .
@prefix dc: <http://purl.org/dc/elements/1.1/> .
@prefix foaf: <http://xmlns.com/foaf/0.1/> .
@prefix ns1: <http://vocab.deri.ie/rooms#> .
@prefix ns2: <http://id.southampton.ac.uk/ns/> .
@prefix ns3: <http://www.w3.org/ns/org#> .
@prefix ns4: <http://purl.org/vocab/aiiso/schema#> .

<http://id.southampton.ac.uk/equipment/E10241> rdf:type oo:Equipment ;
                                               rdfs:label "Plasmalab 80 Plus Rie Etcher" ;
                                               oo:contact <http://id.southampton.ac.uk/equipment/E10241#secondary_contact> ;
                                               ns0:within <http://id.southampton.ac.uk/building/53> ;
                                               dcterms:description "The etching plasma is created by an RIE RF source and RF induction magnetic coil to produce high plasma densities. The results are high etch rate, high aspect ratio, and anisotropic etching of material of the samples. The system can also operate in ICP or RIE mode separately. This system is configured for fluorine-based chemistry etching. Ideal for deep oxide etching, silicon nitride, polymer, poly-silicon, amorphous silicon and crystalline silicon." ;
                                               skos:notation "E10241"^^<http://id.southampton.ac.uk/ns/equipment-code-scheme> ;
                                               oo:formalOrganization <http://id.southampton.ac.uk/> ;
                                               dc:description "The etching plasma is created by an RIE RF source and RF induction magnetic coil to produce high plasma densities. The results are high etch rate, high aspect ratio, and anisotropic etching of material of the samples. The system can also operate in ICP or RIE mode separately. This system is configured for fluorine-based chemistry etching. Ideal for deep oxide etching, silicon nitride, polymer, poly-silicon, amorphous silicon and crystalline silicon." ;
                                               rdfs:comment "The etching plasma is created by an RIE RF source and RF induction magnetic coil to produce high plasma densities. The results are high etch rate, high aspect ratio, and anisotropic etching of material of the samples. The system can also operate in ICP or RIE mode separately. This system is configured for fluorine-based chemistry etching. Ideal for deep oxide etching, silicon nitride, polymer, poly-silicon, amorphous silicon and crystalline silicon." ;
                                               oo:organizationPart <http://id.southampton.ac.uk/org/F7> ,
                                                                   <http://id.southampton.ac.uk/org/FP> ;
                                               oo:primaryContact <http://id.southampton.ac.uk/equipment/E10241#primary_contact> ;
                                               oo:relatedFacility <http://id.southampton.ac.uk/facility/F10014> ;
                                               foaf:page <http://www.southampton-nanofab.com/fabrication/dryEtch.php> .

<http://id.southampton.ac.uk/equipment/E10241#secondary_contact> rdf:type foaf:Person .

<http://id.southampton.ac.uk/building/53> rdf:type ns1:Building ,
                                                   ns2:UoSBuilding ;
                                          rdfs:label "New Mountbatten" .

<http://id.southampton.ac.uk/> rdf:type ns3:Organization ,
                                        ns4:Institution ,
                                        ns3:FormalOrganization ,
                                        foaf:Organization ;
                               rdfs:label "University of Southampton" .

<http://id.southampton.ac.uk/org/F7> rdf:type ns3:OrganizationalUnit ,
                                              ns3:Organization ;
                                     rdfs:label "Physical Sciences and Engineering" .

<http://id.southampton.ac.uk/org/FP> rdf:type ns3:Organization ;
                                     rdfs:label "School of Electronics & Computer Science" .

<http://id.southampton.ac.uk/equipment/E10241#primary_contact> rdf:type foaf:Agent ;
                                                               foaf:name "LESSEY, MARK" .

<http://id.southampton.ac.uk/facility/F10014> rdf:type oo:Facility ;
                                              rdfs:label "Clean Rooms - Nanofabrication" .