http://id.southampton.ac.uk/equipment/E10253

→ rdfs:label → "Opt System 100 Pecvd"^^xsd:string

→ dcterms:description → "Plasma Enhanced Chemical Vapour Deposition (PECVD) system for the growth of amorphous and polycrystalline Si, SiGe and Ge layers. The layers can be doped during growth either n-type (using PH3) or p-type (using B2H6), thereby allowing p-n junctions to be formed. Amorphous silicon uses SiH4 for the source of silicon and CF4 & O2 for cleaning. The growth temperature is typically 250C, giving a growth rate of around 25 nm/min. Stress in the deposited layer is typically <200Mpa. Polycrystalline silicon uses SiH4 for the source of silicon and CF4 & O2 for cleaning. The growth temperature is typically >=610C. The growth rate at 610C is ~2 nm/min and at 650C ~ 20nm/min. Microcrystalline silicon uses SiH4 for the source of silicon and CF4 & O2 for cleaning. The growth temperature is typically in the range 585 - 610C, giving growth rates in the range 1 - 2 nm/min. Amorphous and polycrystalline germanium use GeH4 as a source of Ge and CF4 & O2 for cleaning."^^xsd:string

→ skos:notation → "E10253"^^http://id.southampton.ac.uk/ns/equipment-code-scheme

→ http://data.ordnancesurvey.co.uk/ontology/spatialrelations/within → http://id.southampton.ac.uk/building/53

→ rdfs:comment → "Plasma Enhanced Chemical Vapour Deposition (PECVD) system for the growth of amorphous and polycrystalline Si, SiGe and Ge layers. The layers can be doped during growth either n-type (using PH3) or p-type (using B2H6), thereby allowing p-n junctions to be formed. Amorphous silicon uses SiH4 for the source of silicon and CF4 & O2 for cleaning. The growth temperature is typically 250C, giving a growth rate of around 25 nm/min. Stress in the deposited layer is typically <200Mpa. Polycrystalline silicon uses SiH4 for the source of silicon and CF4 & O2 for cleaning. The growth temperature is typically >=610C. The growth rate at 610C is ~2 nm/min and at 650C ~ 20nm/min. Microcrystalline silicon uses SiH4 for the source of silicon and CF4 & O2 for cleaning. The growth temperature is typically in the range 585 - 610C, giving growth rates in the range 1 - 2 nm/min. Amorphous and polycrystalline germanium use GeH4 as a source of Ge and CF4 & O2 for cleaning."^^xsd:string

→ foaf:depiction → http://data.southampton.ac.uk/image-archive/equipment/raw/E10253-200642-P1000871.jpg

→ oo:contact → http://id.southampton.ac.uk/equipment/E10253#secondary_contact

→ foaf:page → http://www.southampton-nanofab.com/fabrication/cleanroomEquipment.php

→ dc:description → "Plasma Enhanced Chemical Vapour Deposition (PECVD) system for the growth of amorphous and polycrystalline Si, SiGe and Ge layers. The layers can be doped during growth either n-type (using PH3) or p-type (using B2H6), thereby allowing p-n junctions to be formed. Amorphous silicon uses SiH4 for the source of silicon and CF4 & O2 for cleaning. The growth temperature is typically 250C, giving a growth rate of around 25 nm/min. Stress in the deposited layer is typically <200Mpa. Polycrystalline silicon uses SiH4 for the source of silicon and CF4 & O2 for cleaning. The growth temperature is typically >=610C. The growth rate at 610C is ~2 nm/min and at 650C ~ 20nm/min. Microcrystalline silicon uses SiH4 for the source of silicon and CF4 & O2 for cleaning. The growth temperature is typically in the range 585 - 610C, giving growth rates in the range 1 - 2 nm/min. Amorphous and polycrystalline germanium use GeH4 as a source of Ge and CF4 & O2 for cleaning."^^xsd:string

→ oo:formalOrganization → http://id.southampton.ac.uk/

→ oo:organizationPart → http://id.southampton.ac.uk/org/FP, http://id.southampton.ac.uk/org/F7

→ oo:primaryContact → http://id.southampton.ac.uk/equipment/E10253#primary_contact