http://id.southampton.ac.uk/facility/F10009

→ rdfs:label → "Clean Rooms - FHD"

→ http://data.ordnancesurvey.co.uk/ontology/spatialrelations/within → http://id.southampton.ac.uk/building/53

→ dcterms:description → "The ORC at Southampton has a state-of-the-art Flame Hydrolysis Deposition tool for growth of silica-on-silicon waveguide structures. The system allows the incorporation of germanium, phosphorous and boron doping within the silica, and is particularly optimised for high photosensitivity layer growth. The tool can grow films ranging from 2 microns to 20 microns in thickness."

→ skos:notation → "F10009"^^http://id.southampton.ac.uk/ns/equipment-code-scheme

→ oo:formalOrganization → http://id.southampton.ac.uk/

→ dc:description → "The ORC at Southampton has a state-of-the-art Flame Hydrolysis Deposition tool for growth of silica-on-silicon waveguide structures. The system allows the incorporation of germanium, phosphorous and boron doping within the silica, and is particularly optimised for high photosensitivity layer growth. The tool can grow films ranging from 2 microns to 20 microns in thickness."

→ rdfs:comment → "The ORC at Southampton has a state-of-the-art Flame Hydrolysis Deposition tool for growth of silica-on-silicon waveguide structures. The system allows the incorporation of germanium, phosphorous and boron doping within the silica, and is particularly optimised for high photosensitivity layer growth. The tool can grow films ranging from 2 microns to 20 microns in thickness."

→ oo:organizationPart → http://id.southampton.ac.uk/org/F7, http://id.southampton.ac.uk/org/EH

→ oo:primaryContact → http://id.southampton.ac.uk/facility/F10009#primary_contact

→ http://id.southampton.ac.uk/ns/facilityIsRCUKCosted → "true"^^xsd:boolean

http://id.southampton.ac.uk/equipment/E10250

→ oo:contact → http://id.southampton.ac.uk/equipment/E10250#secondary_contact

→ rdf:type → oo:Equipment

→ http://data.ordnancesurvey.co.uk/ontology/spatialrelations/within → http://id.southampton.ac.uk/building/53

→ dcterms:description → "Plasma Enhanced Chemical Vapour Deposition (PECVD) system for the growth of carbon nanotubes (CNTs) and Si, SiGe and Ge nanowires. CNT growth temperatures are typically between 600 and 800C. Aligned growth of CNTs can be achieved with a growth rate up to 40 nm/min and random growth can be achieved with growth rates up to hundreds of nm/min. CNT diameters are typically less than 100nm, but depend on catalyst particle size. Silicon nanowires typically require silane for growth at temperatures of 330 - 650C, and vertical growth rates up to 150nm/min can be achieved. Germanium nanowires typically require germane for growth. SiGe nanowires can be grown by mixing silane and germane Heterojunctions can be created in the SiGe nanowires by appropriate control of the flows. All nanowires can be doped p or n type with the addition of diborane or phosphine to a process"

→ skos:notation → "E10250"^^http://id.southampton.ac.uk/ns/equipment-code-scheme

→ oo:formalOrganization → http://id.southampton.ac.uk/

→ dc:description → "Plasma Enhanced Chemical Vapour Deposition (PECVD) system for the growth of carbon nanotubes (CNTs) and Si, SiGe and Ge nanowires. CNT growth temperatures are typically between 600 and 800C. Aligned growth of CNTs can be achieved with a growth rate up to 40 nm/min and random growth can be achieved with growth rates up to hundreds of nm/min. CNT diameters are typically less than 100nm, but depend on catalyst particle size. Silicon nanowires typically require silane for growth at temperatures of 330 - 650C, and vertical growth rates up to 150nm/min can be achieved. Germanium nanowires typically require germane for growth. SiGe nanowires can be grown by mixing silane and germane Heterojunctions can be created in the SiGe nanowires by appropriate control of the flows. All nanowires can be doped p or n type with the addition of diborane or phosphine to a process"

→ rdfs:comment → "Plasma Enhanced Chemical Vapour Deposition (PECVD) system for the growth of carbon nanotubes (CNTs) and Si, SiGe and Ge nanowires. CNT growth temperatures are typically between 600 and 800C. Aligned growth of CNTs can be achieved with a growth rate up to 40 nm/min and random growth can be achieved with growth rates up to hundreds of nm/min. CNT diameters are typically less than 100nm, but depend on catalyst particle size. Silicon nanowires typically require silane for growth at temperatures of 330 - 650C, and vertical growth rates up to 150nm/min can be achieved. Germanium nanowires typically require germane for growth. SiGe nanowires can be grown by mixing silane and germane Heterojunctions can be created in the SiGe nanowires by appropriate control of the flows. All nanowires can be doped p or n type with the addition of diborane or phosphine to a process"

→ oo:organizationPart → http://id.southampton.ac.uk/org/F7, http://id.southampton.ac.uk/org/FP

→ oo:primaryContact → http://id.southampton.ac.uk/equipment/E10250#primary_contact

→ rdfs:label → "Nanofab 1000 Agile"

→ foaf:page → http://www.southampton-nanofab.com/fabrication/pecvd.php

→ foaf:depiction → http://data.southampton.ac.uk/image-archive/equipment/raw/E10250-200639-P1010240.jpg, http://data.southampton.ac.uk/image-archive/equipment/raw/E10250-200639-P1000873.jpg