→ rdfs:label → "Clean Rooms - Nanofabrication"^^xsd:string
→ dcterms:description → "The Southampton Nanofabrication Centre is a state-of-the-art facility for microfabrication and high-spec nanofabrication, as well as a wide range of characterisation capabilities housed in the new Mountbatten Complex at the University of Southampton. One of the premiere cleanrooms in Europe, the Centre has a uniquely broad range of technologies, combining traditional and novel top down fabrication with state-of-the-art bottom up fabrication. This allows us to develop and produce a wide range of devices in diverse fields such as electronics, nanotechnology and bionanotechnology and incorporate them into an equally comprehensive array of nano and microsystems for analysis and use. The characterisation capability is similarly extensive catalogue of microscopes and test gear, from nanometre resolution scanning microscopes to electrical, magnetic and RF analysis. A detailed equiment list can be found at http://www.southampton-nanofab.com/machineDatabase/"^^xsd:string
→ skos:notation → "F10014"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "The Southampton Nanofabrication Centre is a state-of-the-art facility for microfabrication and high-spec nanofabrication, as well as a wide range of characterisation capabilities housed in the new Mountbatten Complex at the University of Southampton. One of the premiere cleanrooms in Europe, the Centre has a uniquely broad range of technologies, combining traditional and novel top down fabrication with state-of-the-art bottom up fabrication. This allows us to develop and produce a wide range of devices in diverse fields such as electronics, nanotechnology and bionanotechnology and incorporate them into an equally comprehensive array of nano and microsystems for analysis and use. The characterisation capability is similarly extensive catalogue of microscopes and test gear, from nanometre resolution scanning microscopes to electrical, magnetic and RF analysis. A detailed equiment list can be found at http://www.southampton-nanofab.com/machineDatabase/"^^xsd:string
→ dc:description → "The Southampton Nanofabrication Centre is a state-of-the-art facility for microfabrication and high-spec nanofabrication, as well as a wide range of characterisation capabilities housed in the new Mountbatten Complex at the University of Southampton. One of the premiere cleanrooms in Europe, the Centre has a uniquely broad range of technologies, combining traditional and novel top down fabrication with state-of-the-art bottom up fabrication. This allows us to develop and produce a wide range of devices in diverse fields such as electronics, nanotechnology and bionanotechnology and incorporate them into an equally comprehensive array of nano and microsystems for analysis and use. The characterisation capability is similarly extensive catalogue of microscopes and test gear, from nanometre resolution scanning microscopes to electrical, magnetic and RF analysis. A detailed equiment list can be found at http://www.southampton-nanofab.com/machineDatabase/"^^xsd:string
← is
oo:relatedFacility of
← http://id.southampton.ac.uk/equipment/E10235,
http://id.southampton.ac.uk/equipment/E10237,
http://id.southampton.ac.uk/equipment/E10239,
http://id.southampton.ac.uk/equipment/E10240,
http://id.southampton.ac.uk/equipment/E10241,
http://id.southampton.ac.uk/equipment/E10243,
http://id.southampton.ac.uk/equipment/E10244,
http://id.southampton.ac.uk/equipment/E10245,
http://id.southampton.ac.uk/equipment/E10246,
http://id.southampton.ac.uk/equipment/E10249,
http://id.southampton.ac.uk/equipment/E10251,
http://id.southampton.ac.uk/equipment/E10253,
http://id.southampton.ac.uk/equipment/E10255,
http://id.southampton.ac.uk/equipment/E10258,
http://id.southampton.ac.uk/equipment/E10260,
http://id.southampton.ac.uk/equipment/E10261,
http://id.southampton.ac.uk/equipment/E10263,
http://id.southampton.ac.uk/equipment/E10264,
http://id.southampton.ac.uk/equipment/E10265,
http://id.southampton.ac.uk/equipment/E10267,
http://id.southampton.ac.uk/equipment/E10268,
http://id.southampton.ac.uk/equipment/E10270,
http://id.southampton.ac.uk/equipment/E10272,
http://id.southampton.ac.uk/equipment/E10273,
http://id.southampton.ac.uk/equipment/E10274,
http://id.southampton.ac.uk/equipment/E10275,
http://id.southampton.ac.uk/equipment/E10276,
http://id.southampton.ac.uk/equipment/E10277,
http://id.southampton.ac.uk/equipment/E10279,
http://id.southampton.ac.uk/equipment/E10282,
http://id.southampton.ac.uk/equipment/E10283,
http://id.southampton.ac.uk/equipment/E10284,
http://id.southampton.ac.uk/equipment/E10287,
http://id.southampton.ac.uk/equipment/E10288,
http://id.southampton.ac.uk/equipment/E10289,
http://id.southampton.ac.uk/equipment/E10290,
http://id.southampton.ac.uk/equipment/E10291,
http://id.southampton.ac.uk/equipment/E10293,
http://id.southampton.ac.uk/equipment/E10294,
http://id.southampton.ac.uk/equipment/E10304,
http://id.southampton.ac.uk/equipment/E10307,
http://id.southampton.ac.uk/equipment/E10308,
http://id.southampton.ac.uk/equipment/E10309,
http://id.southampton.ac.uk/equipment/E10310,
http://id.southampton.ac.uk/equipment/E10314,
http://id.southampton.ac.uk/equipment/E10318,
http://id.southampton.ac.uk/equipment/E10330,
http://id.southampton.ac.uk/equipment/E10331,
http://id.southampton.ac.uk/equipment/E10343,
http://id.southampton.ac.uk/equipment/E10344,
http://id.southampton.ac.uk/equipment/E10369,
http://id.southampton.ac.uk/equipment/E10392,
http://id.southampton.ac.uk/equipment/E10393,
http://id.southampton.ac.uk/equipment/E10396,
http://id.southampton.ac.uk/equipment/E10398,
http://id.southampton.ac.uk/equipment/E10404,
http://id.southampton.ac.uk/equipment/E10407,
http://id.southampton.ac.uk/equipment/E10408,
http://id.southampton.ac.uk/equipment/E10417,
http://id.southampton.ac.uk/equipment/E10418,
http://id.southampton.ac.uk/equipment/E10419,
http://id.southampton.ac.uk/equipment/E10421,
http://id.southampton.ac.uk/equipment/E10425,
http://id.southampton.ac.uk/equipment/E10434,
http://id.southampton.ac.uk/equipment/E10435,
http://id.southampton.ac.uk/equipment/E10436,
http://id.southampton.ac.uk/equipment/E10438,
http://id.southampton.ac.uk/equipment/E10442,
http://id.southampton.ac.uk/equipment/E10443,
http://id.southampton.ac.uk/equipment/E10446,
http://id.southampton.ac.uk/equipment/E10448,
http://id.southampton.ac.uk/equipment/E10449,
http://id.southampton.ac.uk/equipment/E10450,
http://id.southampton.ac.uk/equipment/E10451,
http://id.southampton.ac.uk/equipment/E10452,
http://id.southampton.ac.uk/equipment/E10453,
http://id.southampton.ac.uk/equipment/E10454,
http://id.southampton.ac.uk/equipment/E10455,
http://id.southampton.ac.uk/equipment/E10456,
http://id.southampton.ac.uk/equipment/E10458,
http://id.southampton.ac.uk/equipment/E10459,
http://id.southampton.ac.uk/equipment/E10464,
http://id.southampton.ac.uk/equipment/E10465,
http://id.southampton.ac.uk/equipment/E10466,
http://id.southampton.ac.uk/equipment/E10467,
http://id.southampton.ac.uk/equipment/E10468,
http://id.southampton.ac.uk/equipment/E10469,
http://id.southampton.ac.uk/equipment/E10471,
http://id.southampton.ac.uk/equipment/E10472,
http://id.southampton.ac.uk/equipment/E10473,
http://id.southampton.ac.uk/equipment/E10474,
http://id.southampton.ac.uk/equipment/E10475,
http://id.southampton.ac.uk/equipment/E10476,
http://id.southampton.ac.uk/equipment/E10477,
http://id.southampton.ac.uk/equipment/E10478,
http://id.southampton.ac.uk/equipment/E10486,
http://id.southampton.ac.uk/equipment/E10488,
http://id.southampton.ac.uk/equipment/E10489,
http://id.southampton.ac.uk/equipment/E10491,
http://id.southampton.ac.uk/equipment/E10492,
http://id.southampton.ac.uk/equipment/E10495,
http://id.southampton.ac.uk/equipment/E10496,
http://id.southampton.ac.uk/equipment/E10500,
http://id.southampton.ac.uk/equipment/E10501,
http://id.southampton.ac.uk/equipment/E10502,
http://id.southampton.ac.uk/equipment/E10505,
http://id.southampton.ac.uk/equipment/E10506,
http://id.southampton.ac.uk/equipment/E10507,
http://id.southampton.ac.uk/equipment/E10508,
http://id.southampton.ac.uk/equipment/E10509,
http://id.southampton.ac.uk/equipment/E10510,
http://id.southampton.ac.uk/equipment/E10511,
http://id.southampton.ac.uk/equipment/E10512,
http://id.southampton.ac.uk/equipment/E10613,
http://id.southampton.ac.uk/equipment/E10614,
http://id.southampton.ac.uk/equipment/E10615,
http://id.southampton.ac.uk/equipment/E10617,
http://id.southampton.ac.uk/equipment/E10712,
http://id.southampton.ac.uk/equipment/E10758,
http://id.southampton.ac.uk/equipment/E10865
→ skos:notation → "53"^^http://id.southampton.ac.uk/ns/building-code-scheme
→ dcterms:spatial → "POLYGON((-1.39913396019065 50.9372142159638,-1.39907008997395 50.9373032056671,-1.39891522041897 50.937259276929,-1.39890569827696 50.9372705987727,-1.39892932396893 50.9372784674524,-1.39859712697686 50.9377277159088,-1.39838674153732 50.93774396259,-1.3984577982763 50.937687410529,-1.39842294364327 50.9376771643524,-1.39822064304129 50.9376180648148,-1.39809892132029 50.937582514482,-1.39802930188577 50.9375621919069,-1.39799786085083 50.9375543798841,-1.3979582451468 50.9375445865492,-1.39795617902165 50.9375199050719,-1.39795384340191 50.9374888833799,-1.39795249592898 50.9374689004178,-1.39794872300479 50.9374351048503,-1.39794863317326 50.9374339726701,-1.39794486024907 50.9373881759563,-1.39794521957518 50.9373882891745,-1.39807691259583 50.93743340658,-1.39810988076676 50.9374439924643,-1.3983446105505 50.9371126021949,-1.39848726301762 50.9371526816356,-1.39856272150148 50.9370497091047,-1.39867465158588 50.9370818632785,-1.3986993552562 50.9370889960675,-1.39913396019065 50.9372142159638))"^^xsd:string
← is
foaf:depicts of
← https://data.southampton.ac.uk/image-archive/buildings/100/53.jpg,
https://data.southampton.ac.uk/image-archive/buildings/1000/53.jpg,
https://data.southampton.ac.uk/image-archive/buildings/1600/53.jpg,
https://data.southampton.ac.uk/image-archive/buildings/1920/53.jpg,
https://data.southampton.ac.uk/image-archive/buildings/200/53.jpg,
https://data.southampton.ac.uk/image-archive/buildings/220x220/53.jpg,
https://data.southampton.ac.uk/image-archive/buildings/240x260/53.jpg,
https://data.southampton.ac.uk/image-archive/buildings/300/53.jpg,
https://data.southampton.ac.uk/image-archive/buildings/320x198/53.jpg,
https://data.southampton.ac.uk/image-archive/buildings/400/53.jpg,
https://data.southampton.ac.uk/image-archive/buildings/480x297/53.jpg,
https://data.southampton.ac.uk/image-archive/buildings/50/53.jpg,
https://data.southampton.ac.uk/image-archive/buildings/600/53.jpg,
https://data.southampton.ac.uk/image-archive/buildings/800/53.jpg,
https://data.southampton.ac.uk/image-archive/buildings/800x600/53.jpg,
https://data.southampton.ac.uk/image-archive/buildings/raw/53.jpg
← is
http://data.ordnancesurvey.co.uk/ontology/spatialrelations/within of
← http://id.southampton.ac.uk/facility/F10014,
http://id.southampton.ac.uk/equipment/E10235,
http://id.southampton.ac.uk/equipment/E10239,
http://id.southampton.ac.uk/equipment/E10240,
http://id.southampton.ac.uk/equipment/E10241,
http://id.southampton.ac.uk/equipment/E10243,
http://id.southampton.ac.uk/equipment/E10244,
http://id.southampton.ac.uk/equipment/E10245,
http://id.southampton.ac.uk/equipment/E10246,
http://id.southampton.ac.uk/equipment/E10249,
http://id.southampton.ac.uk/equipment/E10251,
http://id.southampton.ac.uk/equipment/E10253,
http://id.southampton.ac.uk/equipment/E10258,
http://id.southampton.ac.uk/equipment/E10260,
http://id.southampton.ac.uk/equipment/E10261,
http://id.southampton.ac.uk/equipment/E10263,
http://id.southampton.ac.uk/equipment/E10264,
http://id.southampton.ac.uk/equipment/E10265,
http://id.southampton.ac.uk/equipment/E10267,
http://id.southampton.ac.uk/equipment/E10268,
http://id.southampton.ac.uk/equipment/E10272,
http://id.southampton.ac.uk/equipment/E10273,
http://id.southampton.ac.uk/equipment/E10274,
http://id.southampton.ac.uk/equipment/E10275,
http://id.southampton.ac.uk/equipment/E10276,
http://id.southampton.ac.uk/equipment/E10277,
http://id.southampton.ac.uk/equipment/E10279,
http://id.southampton.ac.uk/equipment/E10282,
http://id.southampton.ac.uk/equipment/E10283,
http://id.southampton.ac.uk/equipment/E10284,
http://id.southampton.ac.uk/equipment/E10287,
http://id.southampton.ac.uk/equipment/E10288,
http://id.southampton.ac.uk/equipment/E10289,
http://id.southampton.ac.uk/equipment/E10290,
http://id.southampton.ac.uk/equipment/E10291,
http://id.southampton.ac.uk/equipment/E10293,
http://id.southampton.ac.uk/equipment/E10304,
http://id.southampton.ac.uk/equipment/E10307,
http://id.southampton.ac.uk/equipment/E10308,
http://id.southampton.ac.uk/equipment/E10314,
http://id.southampton.ac.uk/equipment/E10330,
http://id.southampton.ac.uk/equipment/E10331,
http://id.southampton.ac.uk/equipment/E10396,
http://id.southampton.ac.uk/equipment/E10398,
http://id.southampton.ac.uk/equipment/E10434,
http://id.southampton.ac.uk/equipment/E10435,
http://id.southampton.ac.uk/equipment/E10436,
http://id.southampton.ac.uk/equipment/E10438,
http://id.southampton.ac.uk/equipment/E10442,
http://id.southampton.ac.uk/equipment/E10443,
http://id.southampton.ac.uk/equipment/E10446,
http://id.southampton.ac.uk/equipment/E10448,
http://id.southampton.ac.uk/equipment/E10449,
http://id.southampton.ac.uk/equipment/E10450,
http://id.southampton.ac.uk/equipment/E10451,
http://id.southampton.ac.uk/equipment/E10452,
http://id.southampton.ac.uk/equipment/E10453,
http://id.southampton.ac.uk/equipment/E10454,
http://id.southampton.ac.uk/equipment/E10455,
http://id.southampton.ac.uk/equipment/E10456,
http://id.southampton.ac.uk/equipment/E10458,
http://id.southampton.ac.uk/equipment/E10459,
http://id.southampton.ac.uk/equipment/E10464,
http://id.southampton.ac.uk/equipment/E10465,
http://id.southampton.ac.uk/equipment/E10466,
http://id.southampton.ac.uk/equipment/E10467,
http://id.southampton.ac.uk/equipment/E10468,
http://id.southampton.ac.uk/equipment/E10469,
http://id.southampton.ac.uk/equipment/E10471,
http://id.southampton.ac.uk/equipment/E10472,
http://id.southampton.ac.uk/equipment/E10473,
http://id.southampton.ac.uk/equipment/E10474,
http://id.southampton.ac.uk/equipment/E10475,
http://id.southampton.ac.uk/equipment/E10476,
http://id.southampton.ac.uk/equipment/E10477,
http://id.southampton.ac.uk/equipment/E10478,
http://id.southampton.ac.uk/equipment/E10488,
http://id.southampton.ac.uk/equipment/E10613,
http://id.southampton.ac.uk/equipment/E10614,
http://id.southampton.ac.uk/equipment/E10615,
http://id.southampton.ac.uk/equipment/E10617,
http://id.southampton.ac.uk/equipment/E10712,
http://id.southampton.ac.uk/equipment/E10758
→ rdfs:label → "School of Electronics & Computer Science"^^xsd:string
→ skos:notation → "FP"^^http://id.southampton.ac.uk/ns/alphaCode,
"A3FP000000"^^http://id.southampton.ac.uk/ns/10CharHRCode
→ http://www.w3.org/ns/org#hasSubOrganization → http://id.southampton.ac.uk/org/A3FP020000,
http://id.southampton.ac.uk/org/A3FP030000,
http://id.southampton.ac.uk/org/A3FP040000,
http://id.southampton.ac.uk/org/A3FP050000,
http://id.southampton.ac.uk/org/A3FP060000,
http://id.southampton.ac.uk/org/A3FP080000,
http://id.southampton.ac.uk/org/A3FP090000,
http://id.southampton.ac.uk/org/A3FP100000,
http://id.southampton.ac.uk/org/A3FP110000,
http://id.southampton.ac.uk/org/A3FP120000,
http://id.southampton.ac.uk/org/A3FP130000,
http://id.southampton.ac.uk/org/A3FP150000,
http://id.southampton.ac.uk/org/A3FP160000
← is
oo:organizationPart of
← http://id.southampton.ac.uk/facility/F10014,
http://id.southampton.ac.uk/equipment/E10235,
http://id.southampton.ac.uk/equipment/E10239,
http://id.southampton.ac.uk/equipment/E10240,
http://id.southampton.ac.uk/equipment/E10241,
http://id.southampton.ac.uk/equipment/E10243,
http://id.southampton.ac.uk/equipment/E10244,
http://id.southampton.ac.uk/equipment/E10245,
http://id.southampton.ac.uk/equipment/E10246,
http://id.southampton.ac.uk/equipment/E10249,
http://id.southampton.ac.uk/equipment/E10251,
http://id.southampton.ac.uk/equipment/E10253,
http://id.southampton.ac.uk/equipment/E10258,
http://id.southampton.ac.uk/equipment/E10260,
http://id.southampton.ac.uk/equipment/E10261,
http://id.southampton.ac.uk/equipment/E10263,
http://id.southampton.ac.uk/equipment/E10264,
http://id.southampton.ac.uk/equipment/E10265,
http://id.southampton.ac.uk/equipment/E10267,
http://id.southampton.ac.uk/equipment/E10268,
http://id.southampton.ac.uk/equipment/E10270,
http://id.southampton.ac.uk/equipment/E10272,
http://id.southampton.ac.uk/equipment/E10273,
http://id.southampton.ac.uk/equipment/E10274,
http://id.southampton.ac.uk/equipment/E10275,
http://id.southampton.ac.uk/equipment/E10276,
http://id.southampton.ac.uk/equipment/E10277,
http://id.southampton.ac.uk/equipment/E10279,
http://id.southampton.ac.uk/equipment/E10282,
http://id.southampton.ac.uk/equipment/E10283,
http://id.southampton.ac.uk/equipment/E10284,
http://id.southampton.ac.uk/equipment/E10287,
http://id.southampton.ac.uk/equipment/E10288,
http://id.southampton.ac.uk/equipment/E10289,
http://id.southampton.ac.uk/equipment/E10290,
http://id.southampton.ac.uk/equipment/E10291,
http://id.southampton.ac.uk/equipment/E10293,
http://id.southampton.ac.uk/equipment/E10294,
http://id.southampton.ac.uk/equipment/E10434,
http://id.southampton.ac.uk/equipment/E10435,
http://id.southampton.ac.uk/equipment/E10436,
http://id.southampton.ac.uk/equipment/E10438,
http://id.southampton.ac.uk/equipment/E10442,
http://id.southampton.ac.uk/equipment/E10443,
http://id.southampton.ac.uk/equipment/E10446,
http://id.southampton.ac.uk/equipment/E10448,
http://id.southampton.ac.uk/equipment/E10449,
http://id.southampton.ac.uk/equipment/E10450,
http://id.southampton.ac.uk/equipment/E10451,
http://id.southampton.ac.uk/equipment/E10452,
http://id.southampton.ac.uk/equipment/E10453,
http://id.southampton.ac.uk/equipment/E10454,
http://id.southampton.ac.uk/equipment/E10455,
http://id.southampton.ac.uk/equipment/E10456,
http://id.southampton.ac.uk/equipment/E10458,
http://id.southampton.ac.uk/equipment/E10459,
http://id.southampton.ac.uk/equipment/E10464,
http://id.southampton.ac.uk/equipment/E10465,
http://id.southampton.ac.uk/equipment/E10466,
http://id.southampton.ac.uk/equipment/E10467,
http://id.southampton.ac.uk/equipment/E10468,
http://id.southampton.ac.uk/equipment/E10469,
http://id.southampton.ac.uk/equipment/E10471,
http://id.southampton.ac.uk/equipment/E10472,
http://id.southampton.ac.uk/equipment/E10473,
http://id.southampton.ac.uk/equipment/E10474,
http://id.southampton.ac.uk/equipment/E10475,
http://id.southampton.ac.uk/equipment/E10476,
http://id.southampton.ac.uk/equipment/E10477,
http://id.southampton.ac.uk/equipment/E10478,
http://id.southampton.ac.uk/equipment/E10613,
http://id.southampton.ac.uk/equipment/E10614,
http://id.southampton.ac.uk/equipment/E10615,
http://id.southampton.ac.uk/equipment/E10617,
http://id.southampton.ac.uk/equipment/E10712,
http://id.southampton.ac.uk/equipment/E10758
→ rdfs:label → "Physical Sciences and Engineering"^^xsd:string
← is
oo:organizationPart of
← http://id.southampton.ac.uk/facility/F10014,
http://id.southampton.ac.uk/equipment/E10235,
http://id.southampton.ac.uk/equipment/E10237,
http://id.southampton.ac.uk/equipment/E10239,
http://id.southampton.ac.uk/equipment/E10240,
http://id.southampton.ac.uk/equipment/E10241,
http://id.southampton.ac.uk/equipment/E10243,
http://id.southampton.ac.uk/equipment/E10244,
http://id.southampton.ac.uk/equipment/E10245,
http://id.southampton.ac.uk/equipment/E10246,
http://id.southampton.ac.uk/equipment/E10249,
http://id.southampton.ac.uk/equipment/E10251,
http://id.southampton.ac.uk/equipment/E10253,
http://id.southampton.ac.uk/equipment/E10258,
http://id.southampton.ac.uk/equipment/E10260,
http://id.southampton.ac.uk/equipment/E10261,
http://id.southampton.ac.uk/equipment/E10263,
http://id.southampton.ac.uk/equipment/E10264,
http://id.southampton.ac.uk/equipment/E10265,
http://id.southampton.ac.uk/equipment/E10267,
http://id.southampton.ac.uk/equipment/E10268,
http://id.southampton.ac.uk/equipment/E10270,
http://id.southampton.ac.uk/equipment/E10272,
http://id.southampton.ac.uk/equipment/E10273,
http://id.southampton.ac.uk/equipment/E10274,
http://id.southampton.ac.uk/equipment/E10275,
http://id.southampton.ac.uk/equipment/E10276,
http://id.southampton.ac.uk/equipment/E10277,
http://id.southampton.ac.uk/equipment/E10279,
http://id.southampton.ac.uk/equipment/E10282,
http://id.southampton.ac.uk/equipment/E10283,
http://id.southampton.ac.uk/equipment/E10284,
http://id.southampton.ac.uk/equipment/E10287,
http://id.southampton.ac.uk/equipment/E10288,
http://id.southampton.ac.uk/equipment/E10289,
http://id.southampton.ac.uk/equipment/E10290,
http://id.southampton.ac.uk/equipment/E10291,
http://id.southampton.ac.uk/equipment/E10293,
http://id.southampton.ac.uk/equipment/E10294,
http://id.southampton.ac.uk/equipment/E10304,
http://id.southampton.ac.uk/equipment/E10307,
http://id.southampton.ac.uk/equipment/E10308,
http://id.southampton.ac.uk/equipment/E10309,
http://id.southampton.ac.uk/equipment/E10310,
http://id.southampton.ac.uk/equipment/E10314,
http://id.southampton.ac.uk/equipment/E10318,
http://id.southampton.ac.uk/equipment/E10330,
http://id.southampton.ac.uk/equipment/E10331,
http://id.southampton.ac.uk/equipment/E10343,
http://id.southampton.ac.uk/equipment/E10344,
http://id.southampton.ac.uk/equipment/E10369,
http://id.southampton.ac.uk/equipment/E10392,
http://id.southampton.ac.uk/equipment/E10393,
http://id.southampton.ac.uk/equipment/E10396,
http://id.southampton.ac.uk/equipment/E10398,
http://id.southampton.ac.uk/equipment/E10404,
http://id.southampton.ac.uk/equipment/E10407,
http://id.southampton.ac.uk/equipment/E10408,
http://id.southampton.ac.uk/equipment/E10417,
http://id.southampton.ac.uk/equipment/E10418,
http://id.southampton.ac.uk/equipment/E10419,
http://id.southampton.ac.uk/equipment/E10421,
http://id.southampton.ac.uk/equipment/E10425,
http://id.southampton.ac.uk/equipment/E10434,
http://id.southampton.ac.uk/equipment/E10435,
http://id.southampton.ac.uk/equipment/E10436,
http://id.southampton.ac.uk/equipment/E10438,
http://id.southampton.ac.uk/equipment/E10442,
http://id.southampton.ac.uk/equipment/E10443,
http://id.southampton.ac.uk/equipment/E10446,
http://id.southampton.ac.uk/equipment/E10448,
http://id.southampton.ac.uk/equipment/E10449,
http://id.southampton.ac.uk/equipment/E10450,
http://id.southampton.ac.uk/equipment/E10451,
http://id.southampton.ac.uk/equipment/E10452,
http://id.southampton.ac.uk/equipment/E10453,
http://id.southampton.ac.uk/equipment/E10454,
http://id.southampton.ac.uk/equipment/E10455,
http://id.southampton.ac.uk/equipment/E10456,
http://id.southampton.ac.uk/equipment/E10458,
http://id.southampton.ac.uk/equipment/E10459,
http://id.southampton.ac.uk/equipment/E10464,
http://id.southampton.ac.uk/equipment/E10465,
http://id.southampton.ac.uk/equipment/E10466,
http://id.southampton.ac.uk/equipment/E10467,
http://id.southampton.ac.uk/equipment/E10468,
http://id.southampton.ac.uk/equipment/E10469,
http://id.southampton.ac.uk/equipment/E10471,
http://id.southampton.ac.uk/equipment/E10472,
http://id.southampton.ac.uk/equipment/E10473,
http://id.southampton.ac.uk/equipment/E10474,
http://id.southampton.ac.uk/equipment/E10475,
http://id.southampton.ac.uk/equipment/E10476,
http://id.southampton.ac.uk/equipment/E10477,
http://id.southampton.ac.uk/equipment/E10478,
http://id.southampton.ac.uk/equipment/E10486,
http://id.southampton.ac.uk/equipment/E10488,
http://id.southampton.ac.uk/equipment/E10489,
http://id.southampton.ac.uk/equipment/E10491,
http://id.southampton.ac.uk/equipment/E10492,
http://id.southampton.ac.uk/equipment/E10495,
http://id.southampton.ac.uk/equipment/E10496,
http://id.southampton.ac.uk/equipment/E10500,
http://id.southampton.ac.uk/equipment/E10501,
http://id.southampton.ac.uk/equipment/E10502,
http://id.southampton.ac.uk/equipment/E10505,
http://id.southampton.ac.uk/equipment/E10506,
http://id.southampton.ac.uk/equipment/E10507,
http://id.southampton.ac.uk/equipment/E10508,
http://id.southampton.ac.uk/equipment/E10509,
http://id.southampton.ac.uk/equipment/E10510,
http://id.southampton.ac.uk/equipment/E10511,
http://id.southampton.ac.uk/equipment/E10512,
http://id.southampton.ac.uk/equipment/E10613,
http://id.southampton.ac.uk/equipment/E10614,
http://id.southampton.ac.uk/equipment/E10615,
http://id.southampton.ac.uk/equipment/E10617,
http://id.southampton.ac.uk/equipment/E10712,
http://id.southampton.ac.uk/equipment/E10758,
http://id.southampton.ac.uk/equipment/E10865
→ dcterms:description → "The Caliber is a versatile and high performance SPM system designed for multifunctional and routine microscopy of surface topology, polymer, biomaterials and semiconductor materials. The compact design and user friendly interface make it a suitable educational tool as well as for research activity."^^xsd:string
→ skos:notation → "E10235"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "The Caliber is a versatile and high performance SPM system designed for multifunctional and routine microscopy of surface topology, polymer, biomaterials and semiconductor materials. The compact design and user friendly interface make it a suitable educational tool as well as for research activity."^^xsd:string
→ dc:description → "The Caliber is a versatile and high performance SPM system designed for multifunctional and routine microscopy of surface topology, polymer, biomaterials and semiconductor materials. The compact design and user friendly interface make it a suitable educational tool as well as for research activity."^^xsd:string
→ rdfs:label → "Nanonics Hydra SPM/SNOM System (Multiprobe System)"^^xsd:string
→ dcterms:description → "The MultiView 4000 is a multi scanning probe system with an open platform for integration with a Raman spectrometer. The system is configured for dual probes set-up that allows multiple probe SNOM measurement and other SPM imaging. The system is also configured for optical waveguide device characterisation."^^xsd:string
→ skos:notation → "E10237"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "The MultiView 4000 is a multi scanning probe system with an open platform for integration with a Raman spectrometer. The system is configured for dual probes set-up that allows multiple probe SNOM measurement and other SPM imaging. The system is also configured for optical waveguide device characterisation."^^xsd:string
→ dc:description → "The MultiView 4000 is a multi scanning probe system with an open platform for integration with a Raman spectrometer. The system is configured for dual probes set-up that allows multiple probe SNOM measurement and other SPM imaging. The system is also configured for optical waveguide device characterisation."^^xsd:string
→ rdfs:label → "Opt System 100 Oxide Etcher"^^xsd:string
→ dcterms:description → "The etch mechanism of RIE is achieved by using the reactive gas plasma generated by strong RF source (13.56 MHz) to chemically ion etch the material of the samples. Depending on the process recipe, the material⿿s etched profile can achieve high anisotropy. The DP01 RIE80+ system is configured for etching of polysilicon, amorphous silicon, silica, silicon nitride and polymer. 13.56 MHz driven parallel plate reactor Substrate electrode: 170 or 240 mm Shower head gas inlet optimised for RIE High conductance vacuum layout Gases: CHF3, Ar, O2, SF6, CF4, N2"^^xsd:string
→ skos:notation → "E10239"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "The etch mechanism of RIE is achieved by using the reactive gas plasma generated by strong RF source (13.56 MHz) to chemically ion etch the material of the samples. Depending on the process recipe, the material⿿s etched profile can achieve high anisotropy. The DP01 RIE80+ system is configured for etching of polysilicon, amorphous silicon, silica, silicon nitride and polymer. 13.56 MHz driven parallel plate reactor Substrate electrode: 170 or 240 mm Shower head gas inlet optimised for RIE High conductance vacuum layout Gases: CHF3, Ar, O2, SF6, CF4, N2"^^xsd:string
→ dc:description → "The etch mechanism of RIE is achieved by using the reactive gas plasma generated by strong RF source (13.56 MHz) to chemically ion etch the material of the samples. Depending on the process recipe, the material⿿s etched profile can achieve high anisotropy. The DP01 RIE80+ system is configured for etching of polysilicon, amorphous silicon, silica, silicon nitride and polymer. 13.56 MHz driven parallel plate reactor Substrate electrode: 170 or 240 mm Shower head gas inlet optimised for RIE High conductance vacuum layout Gases: CHF3, Ar, O2, SF6, CF4, N2"^^xsd:string
→ rdfs:label → "Opt System 100 Metal Etcher"^^xsd:string
→ dcterms:description → "The etch mechanism of RIE is achieved by using the reactive gas plasma generated by strong RF source (13.56 MHz) to chemically ion etch the material of the samples. Depending on the process recipe, the material⿿s etched profile can achieve high anisotropy. The DP06 RIE80+ system is configured for multimaterial etching like silica, silicon nitride, polymer, III-V based, semiconductor-metal, polysilicon and amorphous silicon."^^xsd:string
→ skos:notation → "E10240"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "The etch mechanism of RIE is achieved by using the reactive gas plasma generated by strong RF source (13.56 MHz) to chemically ion etch the material of the samples. Depending on the process recipe, the material⿿s etched profile can achieve high anisotropy. The DP06 RIE80+ system is configured for multimaterial etching like silica, silicon nitride, polymer, III-V based, semiconductor-metal, polysilicon and amorphous silicon."^^xsd:string
→ dc:description → "The etch mechanism of RIE is achieved by using the reactive gas plasma generated by strong RF source (13.56 MHz) to chemically ion etch the material of the samples. Depending on the process recipe, the material⿿s etched profile can achieve high anisotropy. The DP06 RIE80+ system is configured for multimaterial etching like silica, silicon nitride, polymer, III-V based, semiconductor-metal, polysilicon and amorphous silicon."^^xsd:string
→ rdfs:label → "Plasmalab 80 Plus Rie Etcher"^^xsd:string
→ dcterms:description → "The etching plasma is created by an RIE RF source and RF induction magnetic coil to produce high plasma densities. The results are high etch rate, high aspect ratio, and anisotropic etching of material of the samples. The system can also operate in ICP or RIE mode separately. This system is configured for fluorine-based chemistry etching. Ideal for deep oxide etching, silicon nitride, polymer, poly-silicon, amorphous silicon and crystalline silicon."^^xsd:string
→ skos:notation → "E10241"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "The etching plasma is created by an RIE RF source and RF induction magnetic coil to produce high plasma densities. The results are high etch rate, high aspect ratio, and anisotropic etching of material of the samples. The system can also operate in ICP or RIE mode separately. This system is configured for fluorine-based chemistry etching. Ideal for deep oxide etching, silicon nitride, polymer, poly-silicon, amorphous silicon and crystalline silicon."^^xsd:string
→ dc:description → "The etching plasma is created by an RIE RF source and RF induction magnetic coil to produce high plasma densities. The results are high etch rate, high aspect ratio, and anisotropic etching of material of the samples. The system can also operate in ICP or RIE mode separately. This system is configured for fluorine-based chemistry etching. Ideal for deep oxide etching, silicon nitride, polymer, poly-silicon, amorphous silicon and crystalline silicon."^^xsd:string
→ dcterms:description → "Ionfab300Plus is a modular System designed for ion beam etching. It is used in a wide variety of processes, particularly in the Semiconductor and Optical Coating Industries."^^xsd:string
→ skos:notation → "E10243"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Ionfab300Plus is a modular System designed for ion beam etching. It is used in a wide variety of processes, particularly in the Semiconductor and Optical Coating Industries."^^xsd:string
→ dc:description → "Ionfab300Plus is a modular System designed for ion beam etching. It is used in a wide variety of processes, particularly in the Semiconductor and Optical Coating Industries."^^xsd:string
→ rdfs:label → "EVG620 Top Side Mask Aligner"^^xsd:string
→ dcterms:description → "The EVG 620 provides high precision manual alignment on wafers. This is the main maks aligner of the cleanroom and can handle wafer sizes up to 150mm. Exposure can be performed in hard, soft and proximity modes."^^xsd:string
→ skos:notation → "E10244"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "The EVG 620 provides high precision manual alignment on wafers. This is the main maks aligner of the cleanroom and can handle wafer sizes up to 150mm. Exposure can be performed in hard, soft and proximity modes."^^xsd:string
→ dc:description → "The EVG 620 provides high precision manual alignment on wafers. This is the main maks aligner of the cleanroom and can handle wafer sizes up to 150mm. Exposure can be performed in hard, soft and proximity modes."^^xsd:string
→ rdfs:label → "EVG620 Double Side Mask Aligner"^^xsd:string
→ dcterms:description → "The EVG620 is a dual-use tool designed for optical double-side lithography and precision alignment up to 150 mm wafer sizes. The fully-automated EVG620 utilizes a cassette-to-cassette handling system to efficiently process wafers from 50 mm to 150 mm in diameter, regardless of their shape or thickness. The system safely handles thick, bowed or small diameter wafers. The EVG620 superior alignment stage design achieves highly accurate alignment and exposure results while maintaining high throughput."^^xsd:string
→ skos:notation → "E10245"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "The EVG620 is a dual-use tool designed for optical double-side lithography and precision alignment up to 150 mm wafer sizes. The fully-automated EVG620 utilizes a cassette-to-cassette handling system to efficiently process wafers from 50 mm to 150 mm in diameter, regardless of their shape or thickness. The system safely handles thick, bowed or small diameter wafers. The EVG620 superior alignment stage design achieves highly accurate alignment and exposure results while maintaining high throughput."^^xsd:string
→ dc:description → "The EVG620 is a dual-use tool designed for optical double-side lithography and precision alignment up to 150 mm wafer sizes. The fully-automated EVG620 utilizes a cassette-to-cassette handling system to efficiently process wafers from 50 mm to 150 mm in diameter, regardless of their shape or thickness. The system safely handles thick, bowed or small diameter wafers. The EVG620 superior alignment stage design achieves highly accurate alignment and exposure results while maintaining high throughput."^^xsd:string
→ rdfs:label → "Evg620 Double Side Mask Aligner"^^xsd:string
→ dcterms:description → "The EVG620 is a dual-use tool designed for optical double-side lithography and precision alignment up to 150 mm wafer sizes. The fully-automated EVG620 utilizes a cassette-to-cassette handling system to efficiently process wafers from 50 mm to 150 mm in diameter, regardless of their shape or thickness. The system safely handles thick, bowed or small diameter wafers. The EVG620 superior alignment stage design achieves highly accurate alignment and exposure results while maintaining high throughput."^^xsd:string
→ skos:notation → "E10246"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "The EVG620 is a dual-use tool designed for optical double-side lithography and precision alignment up to 150 mm wafer sizes. The fully-automated EVG620 utilizes a cassette-to-cassette handling system to efficiently process wafers from 50 mm to 150 mm in diameter, regardless of their shape or thickness. The system safely handles thick, bowed or small diameter wafers. The EVG620 superior alignment stage design achieves highly accurate alignment and exposure results while maintaining high throughput."^^xsd:string
→ dc:description → "The EVG620 is a dual-use tool designed for optical double-side lithography and precision alignment up to 150 mm wafer sizes. The fully-automated EVG620 utilizes a cassette-to-cassette handling system to efficiently process wafers from 50 mm to 150 mm in diameter, regardless of their shape or thickness. The system safely handles thick, bowed or small diameter wafers. The EVG620 superior alignment stage design achieves highly accurate alignment and exposure results while maintaining high throughput."^^xsd:string
→ dcterms:description → "The focussed ion beam (FIB) is a multi nanofabrication tool system capable of performing sophisticated nanomachining, in-situ metal or insulator deposition, lithography and metrology analysis. This versatile system is based on the dual ion and electron beams column concept, which allows it to perform ionic nanofabrication function while imaging using the scanning electron microscope. The liquid metal ion source (LMIS) for the system is gallium and it is integrated to an ionisation tungsten tip to produce a fine and high resolution ion beam. The additional features in the FIB are ion and electron beam induced deposition using gaseous metal-insulator sources."^^xsd:string
→ skos:notation → "E10249"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "The focussed ion beam (FIB) is a multi nanofabrication tool system capable of performing sophisticated nanomachining, in-situ metal or insulator deposition, lithography and metrology analysis. This versatile system is based on the dual ion and electron beams column concept, which allows it to perform ionic nanofabrication function while imaging using the scanning electron microscope. The liquid metal ion source (LMIS) for the system is gallium and it is integrated to an ionisation tungsten tip to produce a fine and high resolution ion beam. The additional features in the FIB are ion and electron beam induced deposition using gaseous metal-insulator sources."^^xsd:string
→ dc:description → "The focussed ion beam (FIB) is a multi nanofabrication tool system capable of performing sophisticated nanomachining, in-situ metal or insulator deposition, lithography and metrology analysis. This versatile system is based on the dual ion and electron beams column concept, which allows it to perform ionic nanofabrication function while imaging using the scanning electron microscope. The liquid metal ion source (LMIS) for the system is gallium and it is integrated to an ionisation tungsten tip to produce a fine and high resolution ion beam. The additional features in the FIB are ion and electron beam induced deposition using gaseous metal-insulator sources."^^xsd:string
→ rdfs:label → "Atomic layer deposition system"^^xsd:string
→ dcterms:description → "The FlexAl system allows the deposition of ultra-thin layers (typically a few nm) of a variety of metal oxides and nitrides from liquid precursors. The deposition process works by providing a short pulse of precursor, followed by purge and exhaust steps. This cycle is then repeated to build up a layer. Typical growth rates are around 1A/cycle. The system is currently configured for the deposition of ZnO and Al2O3. ZnO is deposited using a DEZ precursor. The deposition rate is typically 1A/cycle at 150C. The refractive index of ALD ZnO varies from 1.75 at low temperature to 1.83 at high temperaure, compared with 1.985 for bulk ZnO. Annealing at 425C (not optimised) can help improve electrical properties."^^xsd:string
→ skos:notation → "E10251"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "The FlexAl system allows the deposition of ultra-thin layers (typically a few nm) of a variety of metal oxides and nitrides from liquid precursors. The deposition process works by providing a short pulse of precursor, followed by purge and exhaust steps. This cycle is then repeated to build up a layer. Typical growth rates are around 1A/cycle. The system is currently configured for the deposition of ZnO and Al2O3. ZnO is deposited using a DEZ precursor. The deposition rate is typically 1A/cycle at 150C. The refractive index of ALD ZnO varies from 1.75 at low temperature to 1.83 at high temperaure, compared with 1.985 for bulk ZnO. Annealing at 425C (not optimised) can help improve electrical properties."^^xsd:string
→ dc:description → "The FlexAl system allows the deposition of ultra-thin layers (typically a few nm) of a variety of metal oxides and nitrides from liquid precursors. The deposition process works by providing a short pulse of precursor, followed by purge and exhaust steps. This cycle is then repeated to build up a layer. Typical growth rates are around 1A/cycle. The system is currently configured for the deposition of ZnO and Al2O3. ZnO is deposited using a DEZ precursor. The deposition rate is typically 1A/cycle at 150C. The refractive index of ALD ZnO varies from 1.75 at low temperature to 1.83 at high temperaure, compared with 1.985 for bulk ZnO. Annealing at 425C (not optimised) can help improve electrical properties."^^xsd:string
→ dcterms:description → "Plasma Enhanced Chemical Vapour Deposition (PECVD) system for the growth of amorphous and polycrystalline Si, SiGe and Ge layers. The layers can be doped during growth either n-type (using PH3) or p-type (using B2H6), thereby allowing p-n junctions to be formed. Amorphous silicon uses SiH4 for the source of silicon and CF4 & O2 for cleaning. The growth temperature is typically 250C, giving a growth rate of around 25 nm/min. Stress in the deposited layer is typically <200Mpa. Polycrystalline silicon uses SiH4 for the source of silicon and CF4 & O2 for cleaning. The growth temperature is typically >=610C. The growth rate at 610C is ~2 nm/min and at 650C ~ 20nm/min. Microcrystalline silicon uses SiH4 for the source of silicon and CF4 & O2 for cleaning. The growth temperature is typically in the range 585 - 610C, giving growth rates in the range 1 - 2 nm/min. Amorphous and polycrystalline germanium use GeH4 as a source of Ge and CF4 & O2 for cleaning."^^xsd:string
→ skos:notation → "E10253"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Plasma Enhanced Chemical Vapour Deposition (PECVD) system for the growth of amorphous and polycrystalline Si, SiGe and Ge layers. The layers can be doped during growth either n-type (using PH3) or p-type (using B2H6), thereby allowing p-n junctions to be formed. Amorphous silicon uses SiH4 for the source of silicon and CF4 & O2 for cleaning. The growth temperature is typically 250C, giving a growth rate of around 25 nm/min. Stress in the deposited layer is typically <200Mpa. Polycrystalline silicon uses SiH4 for the source of silicon and CF4 & O2 for cleaning. The growth temperature is typically >=610C. The growth rate at 610C is ~2 nm/min and at 650C ~ 20nm/min. Microcrystalline silicon uses SiH4 for the source of silicon and CF4 & O2 for cleaning. The growth temperature is typically in the range 585 - 610C, giving growth rates in the range 1 - 2 nm/min. Amorphous and polycrystalline germanium use GeH4 as a source of Ge and CF4 & O2 for cleaning."^^xsd:string
→ dc:description → "Plasma Enhanced Chemical Vapour Deposition (PECVD) system for the growth of amorphous and polycrystalline Si, SiGe and Ge layers. The layers can be doped during growth either n-type (using PH3) or p-type (using B2H6), thereby allowing p-n junctions to be formed. Amorphous silicon uses SiH4 for the source of silicon and CF4 & O2 for cleaning. The growth temperature is typically 250C, giving a growth rate of around 25 nm/min. Stress in the deposited layer is typically <200Mpa. Polycrystalline silicon uses SiH4 for the source of silicon and CF4 & O2 for cleaning. The growth temperature is typically >=610C. The growth rate at 610C is ~2 nm/min and at 650C ~ 20nm/min. Microcrystalline silicon uses SiH4 for the source of silicon and CF4 & O2 for cleaning. The growth temperature is typically in the range 585 - 610C, giving growth rates in the range 1 - 2 nm/min. Amorphous and polycrystalline germanium use GeH4 as a source of Ge and CF4 & O2 for cleaning."^^xsd:string
→ rdfs:label → "Coolpower 4.2Gm Two Stge Systems (Obsolete/Decommissioned YE 15/16 - per YY 04/08/2016)"^^xsd:string
→ dcterms:description → "BAK600 e-gun/thermal evaporator is configured for non-reactive deposition of metal contact stacks , metal masking layers, some dielectrics, ITO."^^xsd:string
→ skos:notation → "E10255"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "BAK600 e-gun/thermal evaporator is configured for non-reactive deposition of metal contact stacks , metal masking layers, some dielectrics, ITO."^^xsd:string
→ dc:description → "BAK600 e-gun/thermal evaporator is configured for non-reactive deposition of metal contact stacks , metal masking layers, some dielectrics, ITO."^^xsd:string
→ rdfs:label → "He Ion Microscope: Orion-Bu"^^xsd:string
→ dcterms:description → "The Zeiss Orion helium ion microscope has similar functionality to an electron microscope, but uses a focussed beam of helium ions in place of the electrons. The larger mass and therefore smaller de Broglie wavelength of helium ions compared to electrons means that the scanning helium ions microscope suffers less from diffraction effects than a scanning electron microscope (SEM). Since helium ions can be focused into a smaller probe size and provide a much smaller sample interaction compared to electrons, the Orion generates higher resolution images with better material contrast and 5 times improved depth of focus. The high resolution arises from the use of a finely sharpened needle and a process that strips individual atoms away from the source until an atomic pyramid is created with just three atoms at the very end of the source tip. The Orion achieves a resolution of less than 0.9nm at an energy of 25-30kV and can deliver beam currents between 1fA and 25pA."^^xsd:string
→ skos:notation → "E10258"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "The Zeiss Orion helium ion microscope has similar functionality to an electron microscope, but uses a focussed beam of helium ions in place of the electrons. The larger mass and therefore smaller de Broglie wavelength of helium ions compared to electrons means that the scanning helium ions microscope suffers less from diffraction effects than a scanning electron microscope (SEM). Since helium ions can be focused into a smaller probe size and provide a much smaller sample interaction compared to electrons, the Orion generates higher resolution images with better material contrast and 5 times improved depth of focus. The high resolution arises from the use of a finely sharpened needle and a process that strips individual atoms away from the source until an atomic pyramid is created with just three atoms at the very end of the source tip. The Orion achieves a resolution of less than 0.9nm at an energy of 25-30kV and can deliver beam currents between 1fA and 25pA."^^xsd:string
→ dc:description → "The Zeiss Orion helium ion microscope has similar functionality to an electron microscope, but uses a focussed beam of helium ions in place of the electrons. The larger mass and therefore smaller de Broglie wavelength of helium ions compared to electrons means that the scanning helium ions microscope suffers less from diffraction effects than a scanning electron microscope (SEM). Since helium ions can be focused into a smaller probe size and provide a much smaller sample interaction compared to electrons, the Orion generates higher resolution images with better material contrast and 5 times improved depth of focus. The high resolution arises from the use of a finely sharpened needle and a process that strips individual atoms away from the source until an atomic pyramid is created with just three atoms at the very end of the source tip. The Orion achieves a resolution of less than 0.9nm at an energy of 25-30kV and can deliver beam currents between 1fA and 25pA."^^xsd:string
→ rdfs:label → "Helios Sputtering System Type Xl 6""^^xsd:string
→ dcterms:description → "The HELIOS sputtering tool is a flexible platform for fast, precise and fully automated thin film coatings. It specializes in high quality optical coatings featuring very low absorption and scattering. Optical performance is ensured by the extremely dense, smooth, stoichiometric, and amorphous layers. Precision in layer growth control is facilitated by an optical monitoring system for in-situ on-substrate measurements."^^xsd:string
→ skos:notation → "E10260"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "The HELIOS sputtering tool is a flexible platform for fast, precise and fully automated thin film coatings. It specializes in high quality optical coatings featuring very low absorption and scattering. Optical performance is ensured by the extremely dense, smooth, stoichiometric, and amorphous layers. Precision in layer growth control is facilitated by an optical monitoring system for in-situ on-substrate measurements."^^xsd:string
→ dc:description → "The HELIOS sputtering tool is a flexible platform for fast, precise and fully automated thin film coatings. It specializes in high quality optical coatings featuring very low absorption and scattering. Optical performance is ensured by the extremely dense, smooth, stoichiometric, and amorphous layers. Precision in layer growth control is facilitated by an optical monitoring system for in-situ on-substrate measurements."^^xsd:string
→ rdfs:label → "Field Emmission Scanning Electron Microscope (FEG-SEM)"^^xsd:string
→ dcterms:description → "High resolution FEG-SEM for sub 100nm imaging. Magnification x100 to x1000000"^^xsd:string
→ skos:notation → "E10261"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "High resolution FEG-SEM for sub 100nm imaging. Magnification x100 to x1000000"^^xsd:string
→ dc:description → "High resolution FEG-SEM for sub 100nm imaging. Magnification x100 to x1000000"^^xsd:string
→ dcterms:description → " LAB700 e-gun evaporator incorporates 2e-guns each with a 5xcrucible plate. is configured for reactive ion assisted deposition of dielectrics, high precision lift off, variable angle deposition, cryogenic deposition"^^xsd:string
→ skos:notation → "E10263"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → " LAB700 e-gun evaporator incorporates 2e-guns each with a 5xcrucible plate. is configured for reactive ion assisted deposition of dielectrics, high precision lift off, variable angle deposition, cryogenic deposition"^^xsd:string
→ dc:description → " LAB700 e-gun evaporator incorporates 2e-guns each with a 5xcrucible plate. is configured for reactive ion assisted deposition of dielectrics, high precision lift off, variable angle deposition, cryogenic deposition"^^xsd:string
→ dcterms:description → "X-ray fluorescence (XRF) analysis of glasses & high sensitivity trace analysis, spatial resolution 50um, sensitivity element dependant, down to 50ppm"^^xsd:string
→ skos:notation → "E10264"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "X-ray fluorescence (XRF) analysis of glasses & high sensitivity trace analysis, spatial resolution 50um, sensitivity element dependant, down to 50ppm"^^xsd:string
→ dc:description → "X-ray fluorescence (XRF) analysis of glasses & high sensitivity trace analysis, spatial resolution 50um, sensitivity element dependant, down to 50ppm"^^xsd:string
→ dcterms:description → "Sub 100nm spatial resolution imagaing of distribution elements in a sample. Spatial location of lements in an alloy, imaging of contacts under metal, semiconductor metal failure analysis, analysis of layered structures."^^xsd:string
→ skos:notation → "E10265"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Sub 100nm spatial resolution imagaing of distribution elements in a sample. Spatial location of lements in an alloy, imaging of contacts under metal, semiconductor metal failure analysis, analysis of layered structures."^^xsd:string
→ dc:description → "Sub 100nm spatial resolution imagaing of distribution elements in a sample. Spatial location of lements in an alloy, imaging of contacts under metal, semiconductor metal failure analysis, analysis of layered structures."^^xsd:string
→ rdfs:label → "Auto 306 Resistance Evaporation System"^^xsd:string
→ dcterms:description → "Resistance evaporation source for filament or boat evaporation. A built-in shield prevents unwanted coating of the vacuum chamber and adjacent deposition accessories. Four position turret evaporation source capable of sequentially depositing up to 4 different materials without breaking vacuum. Sources are selected and rotated into the evaporation position using a simple handwheel control. The sources can be configured to evaporate from the center or the side of the vacuum chamber for optimum film thickness uniformity onto a choice of static or rotating substrate fixtures."^^xsd:string
→ skos:notation → "E10267"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Resistance evaporation source for filament or boat evaporation. A built-in shield prevents unwanted coating of the vacuum chamber and adjacent deposition accessories. Four position turret evaporation source capable of sequentially depositing up to 4 different materials without breaking vacuum. Sources are selected and rotated into the evaporation position using a simple handwheel control. The sources can be configured to evaporate from the center or the side of the vacuum chamber for optimum film thickness uniformity onto a choice of static or rotating substrate fixtures."^^xsd:string
→ dc:description → "Resistance evaporation source for filament or boat evaporation. A built-in shield prevents unwanted coating of the vacuum chamber and adjacent deposition accessories. Four position turret evaporation source capable of sequentially depositing up to 4 different materials without breaking vacuum. Sources are selected and rotated into the evaporation position using a simple handwheel control. The sources can be configured to evaporate from the center or the side of the vacuum chamber for optimum film thickness uniformity onto a choice of static or rotating substrate fixtures."^^xsd:string
→ dcterms:description → "Cleaner/lift-off/stripper module/developer module. 4,6,8 inch wafers, 5.6.7 inch plates."^^xsd:string
→ skos:notation → "E10268"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Cleaner/lift-off/stripper module/developer module. 4,6,8 inch wafers, 5.6.7 inch plates."^^xsd:string
→ dc:description → "Cleaner/lift-off/stripper module/developer module. 4,6,8 inch wafers, 5.6.7 inch plates."^^xsd:string
→ rdfs:label → "Rapid Prototyping System"^^xsd:string
→ dcterms:description → "Rapid prototyping machine, build resolution x-axis 600dpi/42um, y-axis 600dpi/42um, z-axis 1600dpi/16um, build size XxYxZ) 342 x 342 x 200mm, input formats STL, IPT, IAM, SLC and objDF files. Two resin setup VeroWhite (hard) and VeroBlack (soft), capable of producing parts of any hardness level by mixing both resins."^^xsd:string
→ skos:notation → "E10270"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Rapid prototyping machine, build resolution x-axis 600dpi/42um, y-axis 600dpi/42um, z-axis 1600dpi/16um, build size XxYxZ) 342 x 342 x 200mm, input formats STL, IPT, IAM, SLC and objDF files. Two resin setup VeroWhite (hard) and VeroBlack (soft), capable of producing parts of any hardness level by mixing both resins."^^xsd:string
→ dc:description → "Rapid prototyping machine, build resolution x-axis 600dpi/42um, y-axis 600dpi/42um, z-axis 1600dpi/16um, build size XxYxZ) 342 x 342 x 200mm, input formats STL, IPT, IAM, SLC and objDF files. Two resin setup VeroWhite (hard) and VeroBlack (soft), capable of producing parts of any hardness level by mixing both resins."^^xsd:string
→ rdfs:label → "Nikon L200D microscope"^^xsd:string
→ dcterms:description → "Upright 8" yellow room microscope, 5M camera, 5x to 150x objectives, Nomarski"^^xsd:string
→ skos:notation → "E10272"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Upright 8" yellow room microscope, 5M camera, 5x to 150x objectives, Nomarski"^^xsd:string
→ dc:description → "Upright 8" yellow room microscope, 5M camera, 5x to 150x objectives, Nomarski"^^xsd:string
→ rdfs:label → "Nikon LV100D Bioelectronics microscope"^^xsd:string
→ dcterms:description → "Upright 6" bioMEMS microscope, 5m camera, display & software, 5x to 150x objectives, Nomarski"^^xsd:string
→ skos:notation → "E10273"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Upright 6" bioMEMS microscope, 5m camera, display & software, 5x to 150x objectives, Nomarski"^^xsd:string
→ dc:description → "Upright 6" bioMEMS microscope, 5m camera, display & software, 5x to 150x objectives, Nomarski"^^xsd:string
→ rdfs:label → "DC Device Multi Probe Station"^^xsd:string
→ dcterms:description → "Cascade Microtech prober, 4 x DCM 210 positioners, Agilent 4155C Semiconductor Parameter Analyser, Agilent 4279A 1MHz CV meter, Agilent E4443A sHz-6.7GHz spectrum analyser, Agilent MXG N5181A analog signal generator 250 KHz-1 GHz"^^xsd:string
→ skos:notation → "E10274"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Cascade Microtech prober, 4 x DCM 210 positioners, Agilent 4155C Semiconductor Parameter Analyser, Agilent 4279A 1MHz CV meter, Agilent E4443A sHz-6.7GHz spectrum analyser, Agilent MXG N5181A analog signal generator 250 KHz-1 GHz"^^xsd:string
→ dc:description → "Cascade Microtech prober, 4 x DCM 210 positioners, Agilent 4155C Semiconductor Parameter Analyser, Agilent 4279A 1MHz CV meter, Agilent E4443A sHz-6.7GHz spectrum analyser, Agilent MXG N5181A analog signal generator 250 KHz-1 GHz"^^xsd:string
→ rdfs:label → "Summit 12000B-Ap Probe Station Platform"^^xsd:string
→ dcterms:description → "Semi-automatic 200mm probe station with micro-chamber, temperature control -65-200C. 4x67GHz infinity probes, eVue digital imaging system"^^xsd:string
→ skos:notation → "E10275"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Semi-automatic 200mm probe station with micro-chamber, temperature control -65-200C. 4x67GHz infinity probes, eVue digital imaging system"^^xsd:string
→ dc:description → "Semi-automatic 200mm probe station with micro-chamber, temperature control -65-200C. 4x67GHz infinity probes, eVue digital imaging system"^^xsd:string
→ rdfs:label → "Theta probe PARXPS system"^^xsd:string
→ dcterms:description → "Parallel angle-resolved XPS (PARXPS) analysis without sample tilting, ability to collect angle-resolved XPS spectra over a 60 degree angular range, in parallel, without tilting the sample and allows the instrument to characterise ultra-thin films non-destructively, allows composition depth profiling using an integrated etching module, X-ray monochrmator with user-selectable spot size in the range 15um to 400um,. Ability to handle large or multiple samples, CCD sample alignment microscope perpendicular to the sample surface."^^xsd:string
→ skos:notation → "E10276"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Parallel angle-resolved XPS (PARXPS) analysis without sample tilting, ability to collect angle-resolved XPS spectra over a 60 degree angular range, in parallel, without tilting the sample and allows the instrument to characterise ultra-thin films non-destructively, allows composition depth profiling using an integrated etching module, X-ray monochrmator with user-selectable spot size in the range 15um to 400um,. Ability to handle large or multiple samples, CCD sample alignment microscope perpendicular to the sample surface."^^xsd:string
→ dc:description → "Parallel angle-resolved XPS (PARXPS) analysis without sample tilting, ability to collect angle-resolved XPS spectra over a 60 degree angular range, in parallel, without tilting the sample and allows the instrument to characterise ultra-thin films non-destructively, allows composition depth profiling using an integrated etching module, X-ray monochrmator with user-selectable spot size in the range 15um to 400um,. Ability to handle large or multiple samples, CCD sample alignment microscope perpendicular to the sample surface."^^xsd:string
→ rdfs:label → "Polytec MSA-400 Micro System Analyzer"^^xsd:string
→ dcterms:description → "3D MEMS dynamics and topography tester. Scanning laser vibrometry for out of plane vibrations up to 20MHz, stroboscopic video microscopy for in-plane motion & vibrations, white light interferometry for surface topography␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣http://data.southampton.ac.uk/equipment/E10277.html"^^xsd:string
→ skos:notation → "E10277"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "3D MEMS dynamics and topography tester. Scanning laser vibrometry for out of plane vibrations up to 20MHz, stroboscopic video microscopy for in-plane motion & vibrations, white light interferometry for surface topography␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣http://data.southampton.ac.uk/equipment/E10277.html"^^xsd:string
→ dc:description → "3D MEMS dynamics and topography tester. Scanning laser vibrometry for out of plane vibrations up to 20MHz, stroboscopic video microscopy for in-plane motion & vibrations, white light interferometry for surface topography␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣␣http://data.southampton.ac.uk/equipment/E10277.html"^^xsd:string
→ rdfs:label → "Cascade Microtech M150 Mulitpurpose Probing System"^^xsd:string
→ dcterms:description → "150mm manual probe station, 6 probes, Leica S6 stereo zoom microscope, 0.6-4xzoom, 30 x eyepieces"^^xsd:string
→ skos:notation → "E10279"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "150mm manual probe station, 6 probes, Leica S6 stereo zoom microscope, 0.6-4xzoom, 30 x eyepieces"^^xsd:string
→ dc:description → "150mm manual probe station, 6 probes, Leica S6 stereo zoom microscope, 0.6-4xzoom, 30 x eyepieces"^^xsd:string
→ rdfs:label → "Jetfirst 200 Rta / Jetfirst 200 Rta No Pump"^^xsd:string
→ dcterms:description → "150mm wafers, temepratures from 400-1000/1200C (pyrometer), 400-1000C (thermocouple), times from 5s to 10mins, temperature accuracy +5c, temperature reproducibility"^^xsd:string
→ skos:notation → "E10282"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "150mm wafers, temepratures from 400-1000/1200C (pyrometer), 400-1000C (thermocouple), times from 5s to 10mins, temperature accuracy +5c, temperature reproducibility"^^xsd:string
→ dc:description → "150mm wafers, temepratures from 400-1000/1200C (pyrometer), 400-1000C (thermocouple), times from 5s to 10mins, temperature accuracy +5c, temperature reproducibility"^^xsd:string
→ dcterms:description → "150mm wafers, manual loading, general furnace, temperature accuracy +/- 1C, 25 wafer boats."^^xsd:string
→ skos:notation → "E10283"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "150mm wafers, manual loading, general furnace, temperature accuracy +/- 1C, 25 wafer boats."^^xsd:string
→ dc:description → "150mm wafers, manual loading, general furnace, temperature accuracy +/- 1C, 25 wafer boats."^^xsd:string
→ rdfs:label → "Tempress Clean Furnace Stack"^^xsd:string
→ dcterms:description → "150mm wafers, automated loading, dru oxidation 600-1150C, wet oxidation 600-1150C, anneal 600-1150C, temperature accuracy +/- 1C, 25 wafer boats."^^xsd:string
→ skos:notation → "E10284"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "150mm wafers, automated loading, dru oxidation 600-1150C, wet oxidation 600-1150C, anneal 600-1150C, temperature accuracy +/- 1C, 25 wafer boats."^^xsd:string
→ dc:description → "150mm wafers, automated loading, dru oxidation 600-1150C, wet oxidation 600-1150C, anneal 600-1150C, temperature accuracy +/- 1C, 25 wafer boats."^^xsd:string
→ rdfs:label → "5430 Fine Wire Bonder SN 30280"^^xsd:string
→ dcterms:description → "Ultrasonic wedge bonder, AI and Au wires (25um), minimum bond pads 50x50um2, bare silicon bonding, programmable individual bonding parameters."^^xsd:string
→ skos:notation → "E10287"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Ultrasonic wedge bonder, AI and Au wires (25um), minimum bond pads 50x50um2, bare silicon bonding, programmable individual bonding parameters."^^xsd:string
→ dc:description → "Ultrasonic wedge bonder, AI and Au wires (25um), minimum bond pads 50x50um2, bare silicon bonding, programmable individual bonding parameters."^^xsd:string
→ dcterms:description → "Scribing of Si, glass & brittle materials. Scribing of glass in all directions with auto alignment function, handles up 300mm substrates with a thickness up to 2mm."^^xsd:string
→ skos:notation → "E10288"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Scribing of Si, glass & brittle materials. Scribing of glass in all directions with auto alignment function, handles up 300mm substrates with a thickness up to 2mm."^^xsd:string
→ dc:description → "Scribing of Si, glass & brittle materials. Scribing of glass in all directions with auto alignment function, handles up 300mm substrates with a thickness up to 2mm."^^xsd:string
→ dcterms:description → "Wafer scribing tool, Vanadium Fibre Laser (1064nm wavelength, 0.25mJ pulse energy, 25um spot size), up to 5000 mm/s scanning speed, programmable z-axis, 245 lens upgrade allowing 220mm diameter field size, vision system for lase focusiing"^^xsd:string
→ skos:notation → "E10289"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Wafer scribing tool, Vanadium Fibre Laser (1064nm wavelength, 0.25mJ pulse energy, 25um spot size), up to 5000 mm/s scanning speed, programmable z-axis, 245 lens upgrade allowing 220mm diameter field size, vision system for lase focusiing"^^xsd:string
→ dc:description → "Wafer scribing tool, Vanadium Fibre Laser (1064nm wavelength, 0.25mJ pulse energy, 25um spot size), up to 5000 mm/s scanning speed, programmable z-axis, 245 lens upgrade allowing 220mm diameter field size, vision system for lase focusiing"^^xsd:string
→ rdfs:label → "Woollam Md2000D Ellipsometer"^^xsd:string
→ dcterms:description → "Spectral range 190nm-1999nm, 200mm computer controlled sample positioning, auto angle of incidence"^^xsd:string
→ skos:notation → "E10290"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Spectral range 190nm-1999nm, 200mm computer controlled sample positioning, auto angle of incidence"^^xsd:string
→ dc:description → "Spectral range 190nm-1999nm, 200mm computer controlled sample positioning, auto angle of incidence"^^xsd:string
→ dcterms:description → "Measures roughness, waviness, step height and wafer stress, 2D and 3D fully autiomated data scans, sequencing capable, up to 8" substrates, vertical features from 100A-300um with a vertical resolution down to 0.5A."^^xsd:string
→ skos:notation → "E10291"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Measures roughness, waviness, step height and wafer stress, 2D and 3D fully autiomated data scans, sequencing capable, up to 8" substrates, vertical features from 100A-300um with a vertical resolution down to 0.5A."^^xsd:string
→ dc:description → "Measures roughness, waviness, step height and wafer stress, 2D and 3D fully autiomated data scans, sequencing capable, up to 8" substrates, vertical features from 100A-300um with a vertical resolution down to 0.5A."^^xsd:string
→ dcterms:description → "Particle measurement tool, 150mm substrates, sub micron particles down to 0.2um, measurement time 30 sec on 6" wafers, particles sensitivity 0.2um diameter latex spheres, haze sensitivity 0.4ppm, spatial resolution 50um spacing minimum, measurement range 0.004um and 102um in twelve ranges and 256 gradations."^^xsd:string
→ skos:notation → "E10293"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Particle measurement tool, 150mm substrates, sub micron particles down to 0.2um, measurement time 30 sec on 6" wafers, particles sensitivity 0.2um diameter latex spheres, haze sensitivity 0.4ppm, spatial resolution 50um spacing minimum, measurement range 0.004um and 102um in twelve ranges and 256 gradations."^^xsd:string
→ dc:description → "Particle measurement tool, 150mm substrates, sub micron particles down to 0.2um, measurement time 30 sec on 6" wafers, particles sensitivity 0.2um diameter latex spheres, haze sensitivity 0.4ppm, spatial resolution 50um spacing minimum, measurement range 0.004um and 102um in twelve ranges and 256 gradations."^^xsd:string
→ rdfs:label → "Femtosecond Laser System"^^xsd:string
→ dcterms:description → "Femtosecond optical charecterisation system, coherent laser, CCD camera & optics."^^xsd:string
→ skos:notation → "E10294"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Femtosecond optical charecterisation system, coherent laser, CCD camera & optics."^^xsd:string
→ dc:description → "Femtosecond optical charecterisation system, coherent laser, CCD camera & optics."^^xsd:string
→ rdfs:label → "Auto 306 Resistance Evaporation System"^^xsd:string
→ dcterms:description → "Desposition vaporator system. Evaporates commonly used metals (such as aluminum, chromium, silver, gold and many others)."^^xsd:string
→ skos:notation → "E10304"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Desposition vaporator system. Evaporates commonly used metals (such as aluminum, chromium, silver, gold and many others)."^^xsd:string
→ dc:description → "Desposition vaporator system. Evaporates commonly used metals (such as aluminum, chromium, silver, gold and many others)."^^xsd:string
→ rdfs:label → "Optical Spectrum Analyser (AQ6370)"^^xsd:string
→ skos:notation → "E10307"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Optical Spectrum Analyser (AQ6370)"^^xsd:string
→ dcterms:description → "The AQ6370 is Yokogawa`s high speed and high performance Optical Spectrum Analyzer for characterization of optical communications system and optical components. - High wavelength resolution: 0.02 nm[nl]
- Wide close-in dynamic range[nl]
- Single Mode and Multimode fiber test capability, via the same optical input:up to GI 62.5/125nm.[nl]
- Pulsed light measurement capability"^^xsd:string
→ skos:notation → "E10308"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "The AQ6370 is Yokogawa`s high speed and high performance Optical Spectrum Analyzer for characterization of optical communications system and optical components. - High wavelength resolution: 0.02 nm[nl]
- Wide close-in dynamic range[nl]
- Single Mode and Multimode fiber test capability, via the same optical input:up to GI 62.5/125nm.[nl]
- Pulsed light measurement capability"^^xsd:string
→ dc:description → "The AQ6370 is Yokogawa`s high speed and high performance Optical Spectrum Analyzer for characterization of optical communications system and optical components. - High wavelength resolution: 0.02 nm[nl]
- Wide close-in dynamic range[nl]
- Single Mode and Multimode fiber test capability, via the same optical input:up to GI 62.5/125nm.[nl]
- Pulsed light measurement capability"^^xsd:string
→ rdfs:label → "Optical Spectrum Analyser (AQ6370)"^^xsd:string
→ dcterms:description → "The AQ6370 is Yokogawa`s high speed and high performance Optical Spectrum Analyzer for characterization of optical communications system and optical components. - High wavelength resolution: 0.02 nm[nl]
- Wide close-in dynamic range[nl]
- Single Mode and Multimode fiber test capability, via the same optical input:up to GI 62.5/125nm.[nl]
- Pulsed light measurement capability"^^xsd:string
→ skos:notation → "E10309"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "The AQ6370 is Yokogawa`s high speed and high performance Optical Spectrum Analyzer for characterization of optical communications system and optical components. - High wavelength resolution: 0.02 nm[nl]
- Wide close-in dynamic range[nl]
- Single Mode and Multimode fiber test capability, via the same optical input:up to GI 62.5/125nm.[nl]
- Pulsed light measurement capability"^^xsd:string
→ dc:description → "The AQ6370 is Yokogawa`s high speed and high performance Optical Spectrum Analyzer for characterization of optical communications system and optical components. - High wavelength resolution: 0.02 nm[nl]
- Wide close-in dynamic range[nl]
- Single Mode and Multimode fiber test capability, via the same optical input:up to GI 62.5/125nm.[nl]
- Pulsed light measurement capability"^^xsd:string
→ rdfs:label → "Optical Spectrum Analyser (Yokogawa AQ6315A)"^^xsd:string
→ dcterms:description → "The AQ-6515A/-6315B optical spectrum analyzer brings advanced capabilities to a wide range of applications, from light source evaluation to measurement of loss wavelength characteristics in[nl]
optical devices."^^xsd:string
→ skos:notation → "E10310"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "The AQ-6515A/-6315B optical spectrum analyzer brings advanced capabilities to a wide range of applications, from light source evaluation to measurement of loss wavelength characteristics in[nl]
optical devices."^^xsd:string
→ dc:description → "The AQ-6515A/-6315B optical spectrum analyzer brings advanced capabilities to a wide range of applications, from light source evaluation to measurement of loss wavelength characteristics in[nl]
optical devices."^^xsd:string
→ rdfs:label → "Platinum Liner & Buffer Plate"^^xsd:string
→ skos:notation → "E10314"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Picosecond Laser System"^^xsd:string
→ dcterms:description → "The Laser2000 range of picosecond lasers contains both high and low power lasers to cover a wide range of applications. The picosecond pulsed diode lasers and picosecond LED modules are particularly suitable for biomedical applications. High power picosecond lasers designed for industrial microprocessing offer a new level of precision and versatility."^^xsd:string
→ skos:notation → "E10318"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "The Laser2000 range of picosecond lasers contains both high and low power lasers to cover a wide range of applications. The picosecond pulsed diode lasers and picosecond LED modules are particularly suitable for biomedical applications. High power picosecond lasers designed for industrial microprocessing offer a new level of precision and versatility."^^xsd:string
→ dc:description → "The Laser2000 range of picosecond lasers contains both high and low power lasers to cover a wide range of applications. The picosecond pulsed diode lasers and picosecond LED modules are particularly suitable for biomedical applications. High power picosecond lasers designed for industrial microprocessing offer a new level of precision and versatility."^^xsd:string
→ rdfs:label → "Modified Material Testing Machine (M500-100CT)"^^xsd:string
→ dcterms:description → "The CT 500 range of twin column, computer controlled universal materials testing machine using Testometric's feature-rich winTest¿ software running under the Windows¿ operating system. Test setups are fully configurable and simple or more complex multi-stage test routines are controlled using the standard PC serial interface."^^xsd:string
→ skos:notation → "E10330"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "The CT 500 range of twin column, computer controlled universal materials testing machine using Testometric's feature-rich winTest¿ software running under the Windows¿ operating system. Test setups are fully configurable and simple or more complex multi-stage test routines are controlled using the standard PC serial interface."^^xsd:string
→ dc:description → "The CT 500 range of twin column, computer controlled universal materials testing machine using Testometric's feature-rich winTest¿ software running under the Windows¿ operating system. Test setups are fully configurable and simple or more complex multi-stage test routines are controlled using the standard PC serial interface."^^xsd:string
→ rdfs:label → "Fibre Tapering & Bundling System (obsolete 1718)"^^xsd:string
→ dcterms:description → "Offers precision fusion splicing and fused fiber components critical to high-power fiber laser performance. This includes creating combiners and tapers, large mode area (LMA) fiber splicing, photonic crystal fiber (PCF) splicing, and large diameter fiber splicing with low loss."^^xsd:string
→ skos:notation → "E10331"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Offers precision fusion splicing and fused fiber components critical to high-power fiber laser performance. This includes creating combiners and tapers, large mode area (LMA) fiber splicing, photonic crystal fiber (PCF) splicing, and large diameter fiber splicing with low loss."^^xsd:string
→ dc:description → "Offers precision fusion splicing and fused fiber components critical to high-power fiber laser performance. This includes creating combiners and tapers, large mode area (LMA) fiber splicing, photonic crystal fiber (PCF) splicing, and large diameter fiber splicing with low loss."^^xsd:string
→ rdfs:label → "Microspectrometer System (QDI 302 UV)"^^xsd:string
→ dcterms:description → "The QDI 302 Microscope Spectrophotometer is designed to add spectroscopy and imaging to your optical microscope. It can also be used to upgrade a legacy microspectrometer or to add spectroscopic and film thickness capabilities to a probe station. The QDI 302 attaches to the microscope, microspectrometer or probe station and enables you to collect transmission, reflectance, polarization or even fluorescence spectra of microscopic samples. Depending upon the microscope optics and sources, the spectral range is from the deep UV to the near infrared region. With the QDI 302, high quality spectra of even sub-micron samples can be acquired non-destructively and with ease."^^xsd:string
→ skos:notation → "E10343"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "The QDI 302 Microscope Spectrophotometer is designed to add spectroscopy and imaging to your optical microscope. It can also be used to upgrade a legacy microspectrometer or to add spectroscopic and film thickness capabilities to a probe station. The QDI 302 attaches to the microscope, microspectrometer or probe station and enables you to collect transmission, reflectance, polarization or even fluorescence spectra of microscopic samples. Depending upon the microscope optics and sources, the spectral range is from the deep UV to the near infrared region. With the QDI 302, high quality spectra of even sub-micron samples can be acquired non-destructively and with ease."^^xsd:string
→ dc:description → "The QDI 302 Microscope Spectrophotometer is designed to add spectroscopy and imaging to your optical microscope. It can also be used to upgrade a legacy microspectrometer or to add spectroscopic and film thickness capabilities to a probe station. The QDI 302 attaches to the microscope, microspectrometer or probe station and enables you to collect transmission, reflectance, polarization or even fluorescence spectra of microscopic samples. Depending upon the microscope optics and sources, the spectral range is from the deep UV to the near infrared region. With the QDI 302, high quality spectra of even sub-micron samples can be acquired non-destructively and with ease."^^xsd:string
→ rdfs:label → "Optical Component Characterization System"^^xsd:string
→ skos:notation → "E10344"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ skos:notation → "E10369"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ skos:notation → "E10392"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Transmission Microscope (DHM)"^^xsd:string
→ dcterms:description → "Lyncée Tec¿s DHM T1000 series is composed of the only transmission configured optical profilers on the market. Based on Digital Holographic Microscopy technology, its contactless full-field 3D optical topography performed at video rate makes it an ideal tool for quantitative dynamic and static measurements."^^xsd:string
→ skos:notation → "E10393"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Lyncée Tec¿s DHM T1000 series is composed of the only transmission configured optical profilers on the market. Based on Digital Holographic Microscopy technology, its contactless full-field 3D optical topography performed at video rate makes it an ideal tool for quantitative dynamic and static measurements."^^xsd:string
→ dc:description → "Lyncée Tec¿s DHM T1000 series is composed of the only transmission configured optical profilers on the market. Based on Digital Holographic Microscopy technology, its contactless full-field 3D optical topography performed at video rate makes it an ideal tool for quantitative dynamic and static measurements."^^xsd:string
→ skos:notation → "E10396"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Nikon Microscope system"^^xsd:string
→ skos:notation → "E10398"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Lightwave Polarization Analyser"^^xsd:string
→ skos:notation → "E10404"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "XY Stage / 1m␣␣Stage / Frame / Rack"^^xsd:string
→ skos:notation → "E10407"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "AQ317 Spectrum Analyser (purchased in 1999)"^^xsd:string
→ skos:notation → "E10408"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Mira 900F V10 XW Opt 220 Control Box"^^xsd:string
→ dcterms:description → "Control box for Mira 900F, used for mode locking and monitoring of output power"^^xsd:string
→ skos:notation → "E10417"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Control box for Mira 900F, used for mode locking and monitoring of output power"^^xsd:string
→ dc:description → "Control box for Mira 900F, used for mode locking and monitoring of output power"^^xsd:string
→ rdfs:label → "Verdi 10 W solid state Laser System"^^xsd:string
→ dcterms:description → "10W solid state Coherent Verdi-10, continuous wave pump laser, used for pumping Mira 900"^^xsd:string
→ skos:notation → "E10418"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "10W solid state Coherent Verdi-10, continuous wave pump laser, used for pumping Mira 900"^^xsd:string
→ dc:description → "10W solid state Coherent Verdi-10, continuous wave pump laser, used for pumping Mira 900"^^xsd:string
→ rdfs:label → "Coherent RegA 9000 Controller"^^xsd:string
→ dcterms:description → "Control box for Coherent RegA, used for optimising cavity injection and ejection timings"^^xsd:string
→ skos:notation → "E10419"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Control box for Coherent RegA, used for optimising cavity injection and ejection timings"^^xsd:string
→ dc:description → "Control box for Coherent RegA, used for optimising cavity injection and ejection timings"^^xsd:string
→ rdfs:label → "1000x Direct Diode Laser Serial No. 330739 (purchased in 2003)"^^xsd:string
→ skos:notation → "E10421"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ skos:notation → "E10425"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Radio Frequency Test Kit"^^xsd:string
→ skos:notation → "E10434"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ skos:notation → "E10435"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ skos:notation → "E10436"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Gis System For Orion Microscope"^^xsd:string
→ skos:notation → "E10438"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Gis System For Orion Microscope"^^xsd:string
→ skos:notation → "E10442"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ skos:notation → "E10443"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Quantum Efficiency System"^^xsd:string
→ skos:notation → "E10446"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ skos:notation → "E10448"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Software Expansion Pack For E-Beam"^^xsd:string
→ skos:notation → "E10449"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ dcterms:description → "Solar simulators provide a broadband spectrum close to that of the sun from the UV to the IR. The main part of the solar simulator is a xenon arc lamp that reaches a color temperature of almost 6000K which is very close to sun light. We provide solar simulators with a wide range of luminous fields for different sample sizes and budgets, varying in size from 25 mm to 260 mm x 260 mm in diameter. The irradiance (W/m²) depends on the size of the desired output beam, the lamp¿s power input and the layout of the simulator¿s optic. The spectral characteristics are always the same."^^xsd:string
→ skos:notation → "E10450"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Solar simulators provide a broadband spectrum close to that of the sun from the UV to the IR. The main part of the solar simulator is a xenon arc lamp that reaches a color temperature of almost 6000K which is very close to sun light. We provide solar simulators with a wide range of luminous fields for different sample sizes and budgets, varying in size from 25 mm to 260 mm x 260 mm in diameter. The irradiance (W/m²) depends on the size of the desired output beam, the lamp¿s power input and the layout of the simulator¿s optic. The spectral characteristics are always the same."^^xsd:string
→ dc:description → "Solar simulators provide a broadband spectrum close to that of the sun from the UV to the IR. The main part of the solar simulator is a xenon arc lamp that reaches a color temperature of almost 6000K which is very close to sun light. We provide solar simulators with a wide range of luminous fields for different sample sizes and budgets, varying in size from 25 mm to 260 mm x 260 mm in diameter. The irradiance (W/m²) depends on the size of the desired output beam, the lamp¿s power input and the layout of the simulator¿s optic. The spectral characteristics are always the same."^^xsd:string
→ skos:notation → "E10451"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ skos:notation → "E10452"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Orion Performance Upgrade Package"^^xsd:string
→ skos:notation → "E10453"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Orion Variable Accelerating Voltage Package"^^xsd:string
→ skos:notation → "E10454"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Orion Liquid Nitrogen Cooling Dewar System"^^xsd:string
→ skos:notation → "E10455"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ skos:notation → "E10456"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ skos:notation → "E10458"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Semiconductor Analyser"^^xsd:string
→ skos:notation → "E10459"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Laser Lithography System"^^xsd:string
→ skos:notation → "E10464"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Cryogenic Probe Station"^^xsd:string
→ skos:notation → "E10465"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ skos:notation → "E10466"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ skos:notation → "E10467"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ skos:notation → "E10468"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ dcterms:description → "Vitesse Duo are diode-pumped solid-state lasers using a 10W Verdi CW laser to both seed the Vitesse ultrafast oscillator and pump the RegA. The result is a compact and economical, 2-box, all-solid-state solution for high repetition rate, ultrafast amplification."^^xsd:string
→ skos:notation → "E10469"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Vitesse Duo are diode-pumped solid-state lasers using a 10W Verdi CW laser to both seed the Vitesse ultrafast oscillator and pump the RegA. The result is a compact and economical, 2-box, all-solid-state solution for high repetition rate, ultrafast amplification."^^xsd:string
→ dc:description → "Vitesse Duo are diode-pumped solid-state lasers using a 10W Verdi CW laser to both seed the Vitesse ultrafast oscillator and pump the RegA. The result is a compact and economical, 2-box, all-solid-state solution for high repetition rate, ultrafast amplification."^^xsd:string
→ rdfs:label → "Dry Bed Absorber System"^^xsd:string
→ skos:notation → "E10471"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Zeiss EVO Scanning Electron Microscope"^^xsd:string
→ dcterms:description → "The scanning electron microscope (SEM) is used to examine microscopic topographical or compositional detail of solid specimens. The image is produced by scanning an extremely small focused beam of electrons (adjustable down to a few nm in diameter) across the surface of a specimen in an array of picture points; high-energy electron bombardment of the specimen causes signals to be emitted at each position of the beam. These are collected and their intensities are used to produce images of the specimen by modulating the brightness of equivalent pixels on a computer screen. An SEM has three distinct advantages compared to a light microscope - better resolution, greater depth of field and the ability to carry out X-ray microanalysis. The Zeiss EVO scanning electon microscope (SEM) is able to image the surfaces of a wide variety of non-conducting materials due to its variable pressure (VP) mode."^^xsd:string
→ skos:notation → "E10472"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "The scanning electron microscope (SEM) is used to examine microscopic topographical or compositional detail of solid specimens. The image is produced by scanning an extremely small focused beam of electrons (adjustable down to a few nm in diameter) across the surface of a specimen in an array of picture points; high-energy electron bombardment of the specimen causes signals to be emitted at each position of the beam. These are collected and their intensities are used to produce images of the specimen by modulating the brightness of equivalent pixels on a computer screen. An SEM has three distinct advantages compared to a light microscope - better resolution, greater depth of field and the ability to carry out X-ray microanalysis. The Zeiss EVO scanning electon microscope (SEM) is able to image the surfaces of a wide variety of non-conducting materials due to its variable pressure (VP) mode."^^xsd:string
→ dc:description → "The scanning electron microscope (SEM) is used to examine microscopic topographical or compositional detail of solid specimens. The image is produced by scanning an extremely small focused beam of electrons (adjustable down to a few nm in diameter) across the surface of a specimen in an array of picture points; high-energy electron bombardment of the specimen causes signals to be emitted at each position of the beam. These are collected and their intensities are used to produce images of the specimen by modulating the brightness of equivalent pixels on a computer screen. An SEM has three distinct advantages compared to a light microscope - better resolution, greater depth of field and the ability to carry out X-ray microanalysis. The Zeiss EVO scanning electon microscope (SEM) is able to image the surfaces of a wide variety of non-conducting materials due to its variable pressure (VP) mode."^^xsd:string
→ rdfs:label → "Elemental Analysis: O-Orion-Rbs"^^xsd:string
→ skos:notation → "E10473"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Clear View: O-Orion-Clearview"^^xsd:string
→ skos:notation → "E10474"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Gatan X-ray Ultramicroscope (XuM) (accessory for the EVO SEM LS25 microscope)"^^xsd:string
→ dcterms:description → "The Gatan XuM utilises the electron beam in an scanning electron microscope to generate X-rays which are projected through a sample and onto an X-ray camera to form an image. This provides non-destructive imaging of the internal structure of suitable samples. The sample can be rotated and re-imaged multiple times to build up a tomographic dataset from which a 3D reconstruction of the sample can be generated. The resolution limit of this technique is ~400 nm."^^xsd:string
→ skos:notation → "E10475"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "The Gatan XuM utilises the electron beam in an scanning electron microscope to generate X-rays which are projected through a sample and onto an X-ray camera to form an image. This provides non-destructive imaging of the internal structure of suitable samples. The sample can be rotated and re-imaged multiple times to build up a tomographic dataset from which a 3D reconstruction of the sample can be generated. The resolution limit of this technique is ~400 nm."^^xsd:string
→ dc:description → "The Gatan XuM utilises the electron beam in an scanning electron microscope to generate X-rays which are projected through a sample and onto an X-ray camera to form an image. This provides non-destructive imaging of the internal structure of suitable samples. The sample can be rotated and re-imaged multiple times to build up a tomographic dataset from which a 3D reconstruction of the sample can be generated. The resolution limit of this technique is ~400 nm."^^xsd:string
→ skos:notation → "E10476"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ skos:notation → "E10477"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Analysers/Generator - 3 Items Each Over £25K"^^xsd:string
→ skos:notation → "E10478"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Electronic Magnet (De Groot)"^^xsd:string
→ skos:notation → "E10486"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ skos:notation → "E10488"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Ex Demo V-570Pc Spectrophotometer System"^^xsd:string
→ dcterms:description → "UV/VIS/Near IR spectrophotometer used for Absorption, Transmission and Reflectance measurments from 190 - 2500nm"^^xsd:string
→ skos:notation → "E10489"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "UV/VIS/Near IR spectrophotometer used for Absorption, Transmission and Reflectance measurments from 190 - 2500nm"^^xsd:string
→ dc:description → "UV/VIS/Near IR spectrophotometer used for Absorption, Transmission and Reflectance measurments from 190 - 2500nm"^^xsd:string
→ rdfs:label → "Bridgeport Model Vmc 800X Vertical Machining Centre"^^xsd:string
→ skos:notation → "E10491"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Coherent Enterprise II 653 Ar Ion Laser"^^xsd:string
→ dcterms:description → "Ar Ion laser (352nm and 364nm). 80mW laser power class 3B. Mounted to direct write lithography system. Local ID: PH/1895"^^xsd:string
→ skos:notation → "E10492"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Ar Ion laser (352nm and 364nm). 80mW laser power class 3B. Mounted to direct write lithography system. Local ID: PH/1895"^^xsd:string
→ dc:description → "Ar Ion laser (352nm and 364nm). 80mW laser power class 3B. Mounted to direct write lithography system. Local ID: PH/1895"^^xsd:string
→ rdfs:label → "CCD Sensor (S/N 01412-01-01)–Part of the FRODOSpec for the Liverpool Telescope in the Canary Islands"^^xsd:string
→ skos:notation → "E10495"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Red Optics And Lens Mounts – Part of the FRODOSpec for the Liverpool Telescope in the Canary Islands"^^xsd:string
→ skos:notation → "E10496"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Beamlock 7W VIS/ UV Argon System Etc"^^xsd:string
→ skos:notation → "E10500"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Build into a confocal optical microscope"^^xsd:string
→ dc:description → "Build into a confocal optical microscope"^^xsd:string
→ rdfs:label → "Lasers - Verdi V10 / OPA 9400"^^xsd:string
→ skos:notation → "E10501"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Lasers - Verdi V5 / Mira 900F"^^xsd:string
→ skos:notation → "E10502"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Recirculating Water Chiller for Beamlock 7W UV Argon System (E10500)"^^xsd:string
→ dcterms:description → "Provides cooling water for Beamlock 7W Argon Laser E10500"^^xsd:string
→ skos:notation → "E10505"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Provides cooling water for Beamlock 7W Argon Laser E10500"^^xsd:string
→ dc:description → "Provides cooling water for Beamlock 7W Argon Laser E10500"^^xsd:string
→ skos:notation → "E10506"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Femtotrain & Compressor"^^xsd:string
→ skos:notation → "E10507"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ skos:notation → "E10508"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ skos:notation → "E10509"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Sapphire Laser Upgrade"^^xsd:string
→ skos:notation → "E10510"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Grazing Incidence Vuv Spectrometer / Interface For Reading Images"^^xsd:string
→ skos:notation → "E10511"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "Leo 1455VP Scanning Electron Microscope (SEM)"^^xsd:string
→ dcterms:description → "A 30KV, LaB6(or tungsten filament) scanning electron microscope equipped with an Everhart-Thornley secondary electron detector and a cambridge four quadrant backscatter detector.␣␣Maximum resolution is 10nm depending on column conditions."^^xsd:string
→ skos:notation → "E10512"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "A 30KV, LaB6(or tungsten filament) scanning electron microscope equipped with an Everhart-Thornley secondary electron detector and a cambridge four quadrant backscatter detector.␣␣Maximum resolution is 10nm depending on column conditions."^^xsd:string
→ dc:description → "A 30KV, LaB6(or tungsten filament) scanning electron microscope equipped with an Everhart-Thornley secondary electron detector and a cambridge four quadrant backscatter detector.␣␣Maximum resolution is 10nm depending on column conditions."^^xsd:string
→ rdfs:label → "EVG501 Semi-Automated Lamination Machine"^^xsd:string
→ skos:notation → "E10613"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:label → "EVG620 Double Side Mask Aligner"^^xsd:string
→ dcterms:description → "The EVG620 is a dual-use tool designed for optical double-side lithography and precision alignment up to 150 mm wafer sizes. Volume production types and manual R&D systems are available. An ultra-soft wedge compensation together with a computer controlled contact force between the mask and wafer ensures that both yield and mask lifetime are dramatically increased while production costs are lowered. The fully-automated EVG620 utilizes a cassette-to-cassette handling system to efficiently process wafers from 50 mm to 150 mm in diameter, regardless of their shape or thickness. The system safely handles thick, bowed or small diameter wafers."^^xsd:string
→ skos:notation → "E10614"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "The EVG620 is a dual-use tool designed for optical double-side lithography and precision alignment up to 150 mm wafer sizes. Volume production types and manual R&D systems are available. An ultra-soft wedge compensation together with a computer controlled contact force between the mask and wafer ensures that both yield and mask lifetime are dramatically increased while production costs are lowered. The fully-automated EVG620 utilizes a cassette-to-cassette handling system to efficiently process wafers from 50 mm to 150 mm in diameter, regardless of their shape or thickness. The system safely handles thick, bowed or small diameter wafers."^^xsd:string
→ dc:description → "The EVG620 is a dual-use tool designed for optical double-side lithography and precision alignment up to 150 mm wafer sizes. Volume production types and manual R&D systems are available. An ultra-soft wedge compensation together with a computer controlled contact force between the mask and wafer ensures that both yield and mask lifetime are dramatically increased while production costs are lowered. The fully-automated EVG620 utilizes a cassette-to-cassette handling system to efficiently process wafers from 50 mm to 150 mm in diameter, regardless of their shape or thickness. The system safely handles thick, bowed or small diameter wafers."^^xsd:string
→ rdfs:label → "EVG150 Automated Resist Processing System"^^xsd:string
→ dcterms:description → "Designed to provide the widest range of process variations, the EVG100 series` modularity accepts spin and spray coating, developing, bake and chill modules to suit your individual production requirements. These systems accommodate the processing of an extensive range of materials such as positive and negative resists, polyimides, double-sided coating of thin resist layers, high viscosity resists, and edge protection coatings."^^xsd:string
→ skos:notation → "E10615"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "Designed to provide the widest range of process variations, the EVG100 series` modularity accepts spin and spray coating, developing, bake and chill modules to suit your individual production requirements. These systems accommodate the processing of an extensive range of materials such as positive and negative resists, polyimides, double-sided coating of thin resist layers, high viscosity resists, and edge protection coatings."^^xsd:string
→ dc:description → "Designed to provide the widest range of process variations, the EVG100 series` modularity accepts spin and spray coating, developing, bake and chill modules to suit your individual production requirements. These systems accommodate the processing of an extensive range of materials such as positive and negative resists, polyimides, double-sided coating of thin resist layers, high viscosity resists, and edge protection coatings."^^xsd:string
→ rdfs:label → "3 Stacis "Quiet Island" Support Systems"^^xsd:string
→ dcterms:description → "These systems are actively-damped tables onto which senstive pieces of equipment can be mounted to isolate them from vibrational interference. These are current employed underneath the Zeiss Orion Helium Ion Microscope, the Zeiss Nvision40 Focused Ion Beam and the Zeiss EVO Scanning Electron Microscope."^^xsd:string
→ skos:notation → "E10617"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "These systems are actively-damped tables onto which senstive pieces of equipment can be mounted to isolate them from vibrational interference. These are current employed underneath the Zeiss Orion Helium Ion Microscope, the Zeiss Nvision40 Focused Ion Beam and the Zeiss EVO Scanning Electron Microscope."^^xsd:string
→ dc:description → "These systems are actively-damped tables onto which senstive pieces of equipment can be mounted to isolate them from vibrational interference. These are current employed underneath the Zeiss Orion Helium Ion Microscope, the Zeiss Nvision40 Focused Ion Beam and the Zeiss EVO Scanning Electron Microscope."^^xsd:string
→ rdfs:label → "Theta Probe Angle-Resolved X-ray Photoelectron Spectrometer (ARXPS) System"^^xsd:string
→ dcterms:description → "The Theta Probe X-ray Photoelectron Spectromer (XPS) allows the collection of angle-resolved spectra without the need to tilt the sample to nondestructively characterize ultra-thin layers."^^xsd:string
→ skos:notation → "E10712"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "The Theta Probe X-ray Photoelectron Spectromer (XPS) allows the collection of angle-resolved spectra without the need to tilt the sample to nondestructively characterize ultra-thin layers."^^xsd:string
→ dc:description → "The Theta Probe X-ray Photoelectron Spectromer (XPS) allows the collection of angle-resolved spectra without the need to tilt the sample to nondestructively characterize ultra-thin layers."^^xsd:string
→ rdfs:label → "Nitor 301 Hot Filament Chemical Vapour Deposition (HFCVD)"^^xsd:string
→ dcterms:description → "The Nitor 301 Hot Filament Chemical Vapour Deposition (HFCVD), also known as Hot Wire Chemical Vapour Deposition (HWCVD), is used for deposition of intrinsic and doped amorphous and crystalline silicon films. It uses a proprietary hot filament array on a deposition area of up to 300 x 300 mm."^^xsd:string
→ skos:notation → "E10758"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
→ rdfs:comment → "The Nitor 301 Hot Filament Chemical Vapour Deposition (HFCVD), also known as Hot Wire Chemical Vapour Deposition (HWCVD), is used for deposition of intrinsic and doped amorphous and crystalline silicon films. It uses a proprietary hot filament array on a deposition area of up to 300 x 300 mm."^^xsd:string
→ dc:description → "The Nitor 301 Hot Filament Chemical Vapour Deposition (HFCVD), also known as Hot Wire Chemical Vapour Deposition (HWCVD), is used for deposition of intrinsic and doped amorphous and crystalline silicon films. It uses a proprietary hot filament array on a deposition area of up to 300 x 300 mm."^^xsd:string
→ rdfs:label → "CCD Sensor (S/N 01502-22-02)–Part of the FRODOSpec for the Liverpool Telescope in the Canary Islands"^^xsd:string
→ skos:notation → "E10865"^^http://id.southampton.ac.uk/ns/equipment-code-scheme
