Opt System 100 Oxide Etcher

Opt System 100 Oxide Etcher Photo

The etch mechanism of RIE is achieved by using the reactive gas plasma generated by strong RF source (13.56 MHz) to chemically ion etch the material of the samples. Depending on the process recipe, the material⿿s etched profile can achieve high anisotropy. The DP01 RIE80+ system is configured for etching of polysilicon, amorphous silicon, silica, silicon nitride and polymer. 13.56 MHz driven parallel plate reactor   Substrate electrode: 170 or 240 mm   Shower head gas inlet optimised for RIE   High conductance vacuum layout   Gases: CHF3, Ar, O2, SF6, CF4, N2

Facility:

Clean Rooms - Nanofabrication

Part of:

School of Electronics & Computer Science
Physical Sciences and Engineering

Location:

New Mountbatten

Contact

LESSEY, MARK